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公开(公告)号：EP2702648B1
公开(公告)日：2018-05-09
申请号：EP12774690.7
申请日：2012-03-16
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , KIM, Mijin , MERRITT, Charles, D.
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
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公开(公告)号：EP3376615A1
公开(公告)日：2018-09-19
申请号：EP18169357.3
申请日：2011-11-21
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, L. , BEWLEY, William, W. , LINDLE, James, R. , KIM, Chul-soo , KIM, Mijin
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium comprises an active gain region comprising a plurality of cascading stages, each of the cascading stages including an active gain quantum well region comprising one or more active electron quantum wells and one or more active hole quantum wells, a hole injector region comprising one or more hole quantum wells, and an electron injector region comprising one or more electron quantum wells, a final electron quantum well of an electron injector region of a first stage being separated from an adjacent first active electron quantum well of an active gain quantum well region of a second stage by an electron barrier. The final electron quantum well of the electron injector region of the first stage has a thickness that is between 85 and 110% of a thickness of the adjacent first active electron quantum well of the second stage.
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公开(公告)号：EP2702648A1
公开(公告)日：2014-03-05
申请号：EP12774690.7
申请日：2012-03-16
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , KIM, Mijin , MERRITT, Charles, D.
IPC分类号： H01S3/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density
J
th needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-10
12 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.-
公开(公告)号：EP2643908A2
公开(公告)日：2013-10-02
申请号：EP11843179.0
申请日：2011-11-21
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, L. , BEWLEY, William, W. , LINDLE, James, R. , KIM, Chul-soo , KIM, Mijin
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
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公开(公告)号：EP4460878A2
公开(公告)日：2024-11-13
申请号：EP23737704.9
申请日：2023-01-04
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公开(公告)号：EP2643908B1
公开(公告)日：2019-05-08
申请号：EP11843179.0
申请日：2011-11-21
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公开(公告)号：EP3465776A1
公开(公告)日：2019-04-10
申请号：EP17803639.8
申请日：2017-05-26
发明人： MEYER, Jerry, R. , VURGAFTMAN, Igor , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , MERRITT, Charles, D. , WARREN, Michael, V. , KIM, Mijin
IPC分类号： H01L31/101 , H01L31/0232 , H01L31/032
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公开(公告)号：EP2340589B1
公开(公告)日：2018-03-14
申请号：EP09822404.1
申请日：2009-10-07
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , KIM, Mijin , BEWLEY, William, W. , KIM, Chul-Soo , LINDLE, James, R. , CANEDY, Chadwick, L.
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.
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9.发明公开
公开(公告)号：EP3821505A1
公开(公告)日：2021-05-19
申请号：EP19833825.3
申请日：2019-07-12
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公开(公告)号：EP3769342A1
公开(公告)日：2021-01-27
申请号：EP18911055.4
申请日：2018-12-17
发明人： MEYER, Jerry R. , VURGAFTMAN, Igor , CANEDY, Chadwick Lawrence , BEWLEY, William W. , KIM, Chul Soo , MERRITT, Charles D. , WARREN, Michael V. , KIM, Mijin , STANTON, Eric
IPC分类号： H01L31/0232 , H01L31/0304 , H01L31/105 , H01L31/109 , G02B6/124 , G02B6/12
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