专利检索 ap:("The Government of the United States of America, as represented by the Secretary of the Navy") AND inv:"MERRITT, Charles, D." 第 1 页

1.

发明授权
INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 有权
标题翻译： INTERBAND级联激光器具有工程载体密度

公开(公告)号：EP2702648B1

公开(公告)日：2018-05-09

申请号：EP12774690.7

申请日：2012-03-16

申请人： The Government of the United States of America as represented by the Secretary of the Navy

发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , KIM, Mijin , MERRITT, Charles, D.

IPC分类号： H01S5/34 , H01S5/30 , B82Y20/00

CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313

摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

2.

发明公开
INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 有权
标题翻译：密集操纵载波间-BAND级联激光器

公开(公告)号：EP2702648A1

公开(公告)日：2014-03-05

申请号：EP12774690.7

申请日：2012-03-16

申请人： The Government of the United States of America as represented by the Secretary of the Navy

发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , CANEDY, Chadwick, Lawrence , BEWLEY, William, W. , KIM, Chul, Soo , KIM, Mijin , MERRITT, Charles, D.

IPC分类号： H01S3/00

CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313

摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density
J
th needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-10
12 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.