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公开(公告)号:EP2964455A1
公开(公告)日:2016-01-13
申请号:EP14760501.8
申请日:2014-03-05
IPC分类号: B32B3/00
CPC分类号: C01B31/065 , C01B32/28 , C09K11/65 , H01J37/32651 , H01J37/32788 , H01J2237/3341 , H01J2237/339
摘要: Techniques for fabricating diamond nanostructures including application of a self-assembled hard mask to a surface of a diamond substrate to define a pattern of masked regions having a predetermined diameter surrounded by an exposed portion. The exposed portion can be vertically etched to a predetermined depth using inductively coupled plasma to form a plurality of nanoposts corresponding to the masked regions. The nanoposts can be harvested to obtain a nanostructure with a diameter corresponding to the predetermined diameter and a length corresponding to the predetermined depth.