公开(公告)号：EP3024777A1

公开(公告)日：2016-06-01

申请号：EP14829850.8

申请日：2014-07-23

Applicant: 3M Innovative Properties Company

Inventor： DAVID, Moses M. ,  YU, Ta-Hua ,  BATES, Daniel S. ,  SETH, Jayshree ,  BERGER, Michael S. ,  FRANKE, Carsten ,  ZEHENTMAIER, Sebastian F.

IPC: B82B3/00 ,  B82B1/00

CPC classification number: C23C16/0245 ,  B81C1/00031 ,  B81C2201/0132 ,  C09J7/22 ,  C09J2201/606 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32541 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.

Abstract translation: 一种通过从气体混合物的等离子体化学气相沉积而将衬底沉积到衬底的主表面上而形成纳米结构和纳米结构化制品的方法，同时基本上同时用反应性物质蚀刻表面。 该方法包括提供基板; 当形成等离子体时，能够将能够沉积到衬底上的第一气态物质混合，当形成等离子体时，能够蚀刻衬底的第二气态物质形成气体混合物; 将气态混合物形成等离子体; 以及将所述衬底的表面暴露于所述等离子体，其中所述表面被蚀刻并且基本上同时地在所述蚀刻表面的至少一部分上沉积层，从而形成所述纳米结构。 基底可以是（共）聚合物材料，无机材料，合金，固溶体或其组合。 沉积层可以包括使用包含选自有机硅化合物，金属烷基化合物，金属异丙醇化合物，金属乙酰丙酮化合物，金属卤化物化合物及其组合的化合物的反应气体的等离子体化学气相沉积的反应产物。 可以制备高纵横比的纳米结构，并且任选地在至少一个维度，优选三个正交维度的随机尺寸。

公开(公告)号：EP2964455A1

公开(公告)日：2016-01-13

申请号：EP14760501.8

申请日：2014-03-05

Applicant: The Trustees of Columbia University in the City of New York

Inventor： GAATHON, Ophir ,  ENGLUND, Dirk, R. ,  HODGES, Jonathan ,  LI, Luozhou ,  TRUSHEIM, Matthew

IPC: B32B3/00

CPC classification number: C01B31/065 ,  C01B32/28 ,  C09K11/65 ,  H01J37/32651 ,  H01J37/32788 ,  H01J2237/3341 ,  H01J2237/339

Abstract: Techniques for fabricating diamond nanostructures including application of a self-assembled hard mask to a surface of a diamond substrate to define a pattern of masked regions having a predetermined diameter surrounded by an exposed portion. The exposed portion can be vertically etched to a predetermined depth using inductively coupled plasma to form a plurality of nanoposts corresponding to the masked regions. The nanoposts can be harvested to obtain a nanostructure with a diameter corresponding to the predetermined diameter and a length corresponding to the predetermined depth.

公开(公告)号：EP1144735B1

公开(公告)日：2014-02-12

申请号：EP98961877.2

申请日：1998-12-03

Applicant: GEORGIA TECH RESEARCH CORPORATION

Inventor： MARTIN, Kevin, P. ,  GILLIS, Harry, P. ,  CHOUTOV, Dimitri, A.

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/32596 ,  H01J2237/3341 ,  H01J2237/335

公开(公告)号：EP1439900B1

公开(公告)日：2012-05-09

申请号：EP02773707.1

申请日：2002-10-31

Applicant: Tokyo Electron Limited

Inventor： MOSDEN, Aelan ,  HYLAND, Sandra ,  KAJIMOTO, Minori

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3341 ,  H01L21/3065

Abstract: A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SiF4/Cl2, O2/F2/Cl2, O2/F2, N2O/F2/Cl2, and NO2/F2/Cl2-based chemistries.

公开(公告)号：EP1144735A1

公开(公告)日：2001-10-17

申请号：EP98961877.2

申请日：1998-12-03

Applicant: GEORGIA TECH RESEARCH CORPORATION

Inventor： MARTIN, Kevin, P. ,  GILLIS, Harry, P. ,  CHOUTOV, Dimitri, A.

IPC: C25F3/02 ,  C25F1/02

CPC classification number: H01J37/32623 ,  H01J37/32596 ,  H01J2237/3341 ,  H01J2237/335

Abstract: A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical suport located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

公开(公告)号：EP1100117A2

公开(公告)日：2001-05-16

申请号：EP00124226.2

申请日：2000-11-09

Applicant: SPEEDFAM CO.,LTD.

Inventor： Yanagisawa, Michihiko ,  Sadohara, Takeshi

IPC: H01L21/3065

CPC classification number: H01J37/32192 ,  H01J37/32357 ,  H01J2237/3341 ,  H01L21/3065

Abstract: A surface of a silicon wafer is etched and flattened by injecting a plasma-excited active fluorine species gas of fluoride, e.g. SF6 on the surface of the silicon wafer. During the surface being etched, a sulfur or sulfur compound is separated from the species gas and absorbed on the surface of the silicon wafer. The separated or absorbed material is removed from the surface and thin layer of a silicon oxide is formed thereon by exposing the silicon wafer to a plasma-excited active oxygen species gas or by dipping the silicon wafer into ozone water or hydrofluoric acid solution.

Abstract translation: 通过注入氟化物等离子体激发的活性氟物质气体来蚀刻并平坦化硅晶片的表面。 SF6在硅晶片的表面。 在蚀刻表面期间，硫或硫化合物与物质气体分离并吸收在硅晶片的表面上。 从表面除去分离或吸收的材料，通过将硅晶片暴露于等离子体激发的活性氧气体或通过将硅晶片浸入臭氧水或氢氟酸溶液中而在其上形成氧化硅薄层。

公开(公告)号：EP0624897B1

公开(公告)日：1997-08-06

申请号：EP94303432.2

申请日：1994-05-12

Applicant: IPEC Precision, Inc.

Inventor： Steinberg, George

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/3341

公开(公告)号：EP0527133B1

公开(公告)日：1995-12-27

申请号：EP91903485.0

申请日：1990-10-09

Applicant: International Business Machines Corporation

Inventor： DOWNEY, Douglas, John ,  LIPORACE, James, William

IPC: H01J37/32 ,  H01L21/302

CPC classification number: C23C16/27 ,  C23C14/0611 ,  C23C14/564 ,  C23C16/278 ,  C23C16/4404 ,  H01J37/32504 ,  H01J2237/3341

Abstract: A reactive ion etching chamber is disclosed having conductive diamond-coated wall surfaces (1, 2) to prevent the undesired sputtering of wall particles which can contaminate semiconductor device workpieces undergoing etching within the chamber. The diamond layer is conductive to enable the coated chamber walls to be used as an electrical ground in the reactive ion etching process.

公开(公告)号：EP0115970B1

公开(公告)日：1988-06-01

申请号：EP84400002.6

申请日：1984-01-03

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Laporte, Philippe ,  Peccoud, Louise

IPC: H01J37/32 ,  C23F1/00

CPC classification number: H01J37/32495 ,  C23C4/10 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/16 ,  H01J37/32082 ,  H01J2237/3341 ,  Y10S156/914

公开(公告)号：EP0210858A2

公开(公告)日：1987-02-04

申请号：EP86305779.0

申请日：1986-07-28

Applicant: International Business Machines Corporation

Inventor： Bumble, Bruce ,  Cuomo, Jerome John ,  Logan, Joseph Skinner ,  Rossnagel, Steven Mark

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C14/34 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/3341

Abstract: The cathode (31) in a reactive ion etching and deposition apparatus is in the form of a single plate having a matrix of cylindrical hollows (37) therein, each hollow producing a hollow cathode glow when the apparatus is energised. The aspect ratio (largest dimension of each hollow cross-section/depth of the hollow) is preferably at least 1.5. In operation of the apparatus, an RF voltage is applied between the cathode and an evacuated chamber in which the cathode is disposed through a suitable matching network. A plasma gas is supplied from a point outside the cathode and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range.

Abstract translation: 在反应离子蚀刻和沉积装置中的阴极（31）是在具有圆柱空腔（37）其中，每个中空的中空阴极辉光当装置被通电时的矩阵的单个板的形式。 纵横比（最大大中空的每个中空的横截面/深度的尺寸）优选为至少1.5。 在RF电压的装置的外科手术在阴极和之间的真空室，其中所述阴极通过一个合适的匹配网络处理完毕的应用。 等离子气体从一个点被供给阴极外部和合适的泵送系统是用来维持在0.1至400毫乇范围内的操作压力。