公开(公告)号：EP2123801A1

公开(公告)日：2009-11-25

申请号：EP07792325.8

申请日：2007-08-03

申请人： Tokuyama Corporation

发明人： NAGASHIMA, Toru ,  TAKADA, Kazuya ,  YANAGI, Hiroyuki ,  HARADA, Manabu ,  HIRATA, Yasunori ,  KONDO, Keisuke

IPC分类号： C30B29/38 ,  C23C16/34 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

CPC分类号： C23C16/303 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/4557 ,  C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.
For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.

摘要翻译： 一种生产III族氮化物的方法，例如氮化铝，其包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物 保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物 彼此。 对于通过HVPE生长III族氮化物如铝基III族氮化物，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法， 该方法中使用的装置。