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公开(公告)号：EP1023771B1
公开(公告)日：2007-01-17
申请号：EP98948101.5
申请日：1998-09-17
IPC分类号： H03H7/40
CPC分类号： H03H7/40
摘要： A system and method for processing substrates having an improved matching system. A matching controller (1) is utilized to control multiple matching networks (MNA, MNB, MNC), thus providing improved, more rapid and stable matching. The matching controller (1) can also automatically set up initial matching conditions required during and immediately after plasma initiation, to thereby provide faster and more reliable initial matching, and reduced operator involvement. The system also provides improved instrumentation, for more accurate phase and amplitude detection, and an improved arrangement of power detectors (6A, 6B, 6C). The matching network (MNA, MNB, MNC) also incorporates a circuit for reliable control of tunable elements in a matching network, and a device for protecting tunable elements against damage are also provided.
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公开(公告)号：EP1446633A1
公开(公告)日：2004-08-18
申请号：EP02802120.2
申请日：2002-10-24
发明人： STRANG, Eric, J. , PARSONS, Richard
CPC分类号： H01L21/67253 , G01B15/02 , G01B15/04 , H01J37/32192 , H01J37/32275 , H01J37/32862 , H01J37/32935 , H01J37/3299 , H01L21/67069
摘要： A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.
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3.发明公开DEVICE AND METHOD FOR DETECTING AND PREVENTING ARCING IN RF PLASMA SYSTEMS 审中-公开装置和方法识别和防止射频等离子体系统的形式进行教育
公开(公告)号：EP1025276A1
公开(公告)日：2000-08-09
申请号：EP98950609.2
申请日：1998-09-17
CPC分类号： H01J37/32082 , H01J37/32174 , H01J2237/0206
摘要： A system and method for detecting and preventing arcing in plasma processing systems. Arcing is detected and characterized by measuring and analyzing electrical signals from a circuit (22) coupled to the plasma. After characterization, the electrical signals can then be correlated with arcing events occurring during a processing run. Information can be obtained regarding the location, severity, and frequency of arcing events. The system and method better diagnose the causes of arcing and provide improved protection against undesirable arcing, which can cause damage to the system and the workpiece.
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公开(公告)号：EP1023771A1
公开(公告)日：2000-08-02
申请号：EP98948101.5
申请日：1998-09-17
IPC分类号： H03H7/40
CPC分类号： H03H7/40
摘要： A system and method for processing substrates having an improved matching system. A matching controller (1) is utilized to control multiple matching networks (MNA, MNB, MNC), thus providing improved, more rapid and stable matching. The matching controller (1) can also automatically set up initial matching conditions required during and immediately after plasma initiation, to thereby provide faster and more reliable initial matching, and reduced operator involvement. The system also provides improved instrumentation, for more accurate phase and amplitude detection, and an improved arrangement of power detectors (6A, 6B, 6C). The matching network (MNA, MNB, MNC) also incorporates a circuit for reliable control of tunable elements in a matching network, and a device for protecting tunable elements against damage are also provided.
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5.发明公开
公开(公告)号：EP1018088A1
公开(公告)日：2000-07-12
申请号：EP98950610.0
申请日：1998-09-17
CPC分类号： H01J37/32082 , H01J37/32137 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/32174 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H01J2237/332 , H01J2237/334
摘要： A system and method for monitoring the conditions in a gas plasma processing system while varying or modulating the RF power (2A, 2B, 2C) supplied to the system, so that resulting signals of the electrical circuits of the system provide information regarding operational parameters of the system or the state of a process. Significant improvements in sensitivity and accuracy over conventional techniques are thereby achieved. In addition, the plasma processing system can be thoroughly tested and characterized before delivery, to allow more accurate monitoring by monitor controller (1) of and greater control over a process, thereby improving quality control/assurance of substrates (40) being produced by the system. The information obtained by the modulation technique can be displayed on a monitor screen, in order to allow an operator to accurately monitor the system/process and diagnose any problems with the system/process.
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