公开(公告)号：EP3506337A1

公开(公告)日：2019-07-03

申请号：EP17843585.5

申请日：2017-08-22

Applicant: Toppan Printing Co., Ltd.

Inventor： IKEDA Noriaki ,  NISHIZAWA Makoto

IPC: H01L21/336 ,  G09F9/30 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05

Abstract: Provided are an organic thin-film transistor produced by a printing method with high yield without causing a short circuit failure especially between the gate electrode and the capacitor electrode, ensuring a sufficient capacitor electrode area, and an image display device. The organic thin-film transistor includes: on an insulating substrate, at least a gate electrode; a capacitor electrode; an insulating layer of at least two or more layers; and a source electrode, a drain electrode, and a semiconductor layer containing an organic semiconductor material, which are formed on the insulating layer, wherein: a first insulating layer is formed to cover at least the capacitor electrode; the gate electrode is formed on the first insulating layer; and a second insulating layer is formed to cover the gate electrode.