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    LIGHT-EMITTING DEVICE MATERIAL AND LIGHT-EMITTING DEVICE
    3.
    发明公开
    LIGHT-EMITTING DEVICE MATERIAL AND LIGHT-EMITTING DEVICE 有权
    发光器件材料和发光器件

    公开(公告)号：EP2128217A1

    公开(公告)日：2009-12-02

    申请号：EP08720959.9

    申请日：2008-02-28

    申请人： Toray Industries, Inc.

    发明人： NAGAO, Kazumasa ,  TOMINAGA, Tsuyoshi

    IPC分类号： C09K11/06 ,  C07D307/91 ,  H01L51/50

    CPC分类号： C07D307/91 ,  C07D405/04 ,  C07D405/10 ,  C09B1/00 ,  C09B57/00 ,  C09B57/001 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1088 ,  H01L51/0054 ,  H01L51/5012

    摘要： Disclosed is a light emitting device material including a pyrene compound represented by formula (1) below, which enabled to obtain a light emitting device having high luminance efficiency and good durability. Also disclosed is a light emitting device using such a material. (R 1 to R 17 may be the same or different and are each selected from the group consisting of hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkoxy group, an alkylthio group, an aryl ether group, an aryl thioether group, an aryl group, a heteroaryl group, an amino group, a silyl group, -p(=O)R 18 R 19 , and a ring structure formed together with an adjacent substituent; R 18 and R 19 are each selected from an aryl group and a heteroaryl group; n is an integer of 1 to 2; and X is selected from the group consisting of a single bond, an arylene group and a heteroarylene group, provided that at least one of R 10 to R 17 is used to link to X.)

    摘要翻译： 公开了包括由下式（1）表示的芘化合物的发光器件材料，其能够获得具有高发光效率和良好耐久性的发光器件。 还公开了使用这种材料的发光器件。 （R1至R17可以相同或不同，各自选自氢，烷基，环烷基，杂环基，烷氧基，烷硫基，芳基醚基，芳基硫醚基 ，芳基，杂芳基，氨基，甲硅烷基，-p（= O）R 18 R 19和与相邻取代基一起形成的环结构; R 18和R 19各自选自芳基和杂芳基 ; n是1至2的整数;并且X选自单键，亚芳基和亚杂芳基，条件是R 10至R 17中的至少一个用于连接至X.）

    LIGHT-EMITTING ELEMENT
    6.
    发明公开
    LIGHT-EMITTING ELEMENT 有权
    发光元件

    公开(公告)号：EP2296204A1

    公开(公告)日：2011-03-16

    申请号：EP09773395.0

    申请日：2009-06-26

    申请人： Toray Industries, Inc.

    发明人： NAGAO, Kazumasa ,  ARAI, Takeshi ,  IKEDA, Takeshi ,  TOMINAGA, Tsuyoshi ,  TANAKA, Daisaku ,  ICHIHASHI, Yasunori ,  UEOKA, Koji

    IPC分类号： H01L51/50 ,  C09K11/06

    CPC分类号： H01L51/0072 ,  C09B1/00 ,  C09B57/00 ,  C09B57/001 ,  C09B57/10 ,  H01L51/0054 ,  H01L51/0067 ,  H01L51/0073 ,  H01L51/5048

    摘要： The present invention relates to an organic thin-film light emitting device containing an organic compound represented by formula (1) and a donor compound. the light emitting device ca achieve both of the low-voltage driving operation and high luminance efficiency.

             Y(̵A 1 -Ar) n 1       (1)

    (Y represents either substituted or unsubstituted pyrene, or substituted or unsubstituted anthracene. A 1 is selected from the group consisting of a single bond, an arylene group, and a hetero arylene group. Ar is selected from the group consisting of a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group. These groups may be substituted or unsubstituted, and n 1 is an integer of 1 to 3.)

    摘要翻译： 本发明涉及含有由式（1）表示的有机化合物和供体化合物的有机薄膜发光器件。 发光装置ca可实现低电压驱动操作和高发光效率。 Y（̵A1-Ar）n1（1）（Y表示取代或未取代的芘或者取代或未取代的蒽中的任一种，A1选自单键，亚芳基和亚杂芳基，Ar 由咔唑基，二苯并呋喃基和二苯并噻吩基构成的基团，这些基团可以被取代或未被取代，n1为1〜3的整数。）

    MATERIAL FOR LIGHT-EMITTING ELEMENT AND LIGHT EMITTING ELEMENT
    8.
    发明公开
    MATERIAL FOR LIGHT-EMITTING ELEMENT AND LIGHT EMITTING ELEMENT 有权
    材料FÜRLICHTEMITTIGENDERELEMENT SOWIE LICHTEMITTIERENDES ELEMENT

    公开(公告)号：EP1852486A1

    公开(公告)日：2007-11-07

    申请号：EP06714394.1

    申请日：2006-02-23

    申请人： TORAY INDUSTRIES, INC.

    发明人： SUGIMOTO, Kazunori ,  MURASE, Seiichiro ,  KITAZAWA, Daisuke ,  NAGAO, Kazumasa ,  OGAWA, Takafumi ,  TOMINAGA, Tsuyoshi

    IPC分类号： C09K11/06

    CPC分类号： H01L51/0062 ,  C07D263/32 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1033 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/007 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0081 ,  H01L51/0082 ,  H01L51/0094 ,  H01L51/5012 ,  H01L2251/308 ,  H05B33/14

    摘要： The present invention is a light-emitting device material characterized by containing a pyrene compound represented by the following general formula (1):

    wherein R1 to R10 are specific functional groups, provided that at least one of the R1 to R10 is a substituent represented by the following general formula (2):

    wherein R11 to R14 are specific functional groups, provided that any one of the R11 to R14 is used for a single bond with a pyrene skeleton; X1 is a group represented by the following general formula (3):

    wherein R15 is a specific functional group; and
    Y1 to Y4 is selected from among a nitrogen atom and a carbon atom, provided that at least one of the Y1 to Y4 is a nitrogen atom and at least one thereof is a carbon atom, and no substituents exist on the nitrogen atom in the case of the nitrogen atom.
    This material provides a light-emitting device having high luminous efficiency and excellent durability.

    摘要翻译： 本发明是一种发光装置材料，其特征在于含有下列通式（1）表示的芘化合物：其中R 1至R 10为特定官能团，条件是R 1至R 10中的至少一个为由 以下通式（2）：其中R11〜R14为特定的官能团，条件是R 11〜R 14中的任一个用于与芘骨架的单键; X1是由以下通式（3）表示的基团：其中R 15是特定官能团; 并且Y1至Y4选自氮原子和碳原子，条件是Y1至Y4中的至少一个为氮原子，并且其至少一个为碳原子，并且在氮原子上不存在取代基 氮原子的情况。 该材料提供了发光效率高，耐久性优异的发光元件。

    SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD FOR SAME, AND COMPOUND SENSOR
    9.
    发明公开
    SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD FOR SAME, AND COMPOUND SENSOR 审中-公开

    公开(公告)号：EP3531131A1

    公开(公告)日：2019-08-28

    申请号：EP17864143.7

    申请日：2017-10-13

    申请人： Toray Industries, Inc.

    发明人： NAITO, Kojiro ,  NAGAO, Kazumasa ,  MURASE, Seiichiro

    IPC分类号： G01N33/543 ,  G01N27/327 ,  G01N27/414

    摘要： In order to selectively detect a target substance in high sensitivity, a semiconductor sensor includes a substrate, a first electrode, a second electrode, and a semiconductor layer located between the first electrode and the second electrode, in which the semiconductor layer includes a semiconducting component and a substructure of immunoglobulin, and the substructure of immunoglobulin is bonded or attached to the semiconducting component through a linking group L 1 in a hinge region of a heavy chain. Moreover, a method for producing a semiconductor sensor includes a step of forming the semiconductor layer, the step including a step of applying a semiconducting component between the first electrode and the second electrode.