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公开(公告)号：EP3330240A1
公开(公告)日：2018-06-06
申请号：EP17204501.5
申请日：2017-11-29
IPC分类号： C04B41/89 , C04B41/00 , C04B41/52 , C30B11/00 , C30B35/00 , C04B41/50 , C04B35/573 , C04B35/80 , C04B111/00
CPC分类号： C04B35/806 , C04B35/573 , C04B41/009 , C04B41/5059 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2111/00879 , C04B2235/422 , C04B2235/425 , C04B2235/5436 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/662 , C04B2235/728 , C04B2235/77 , C04B2235/95 , C30B11/002 , C30B29/06 , C30B35/002 , C04B35/522 , C04B35/52 , C04B38/00 , C04B41/4535 , C04B41/455 , C04B41/5066 , C04B41/4556 , C04B41/4539 , C04B41/4582
摘要： La présente invention concerne un procédé utile pour la siliciuration surfacique d'un matériau carboné comprenant au moins les étapes consistant à mettre en contact ladite surface à traiter avec une quantité efficace de particules de silicium ; imposer, au moins à ladite surface revêtue desdites particules de silicium, un traitement thermique propice à la fusion du silicium et à son interaction à l'état fondu avec le carbone de ladite surface pour former du SiC en quantité suffisante pour former, en surface, une couche superficielle de SiC imperméable et en contact direct avec le carbone de ladite surface externe et éliminer le silicium libre en excès notamment par évaporation sous vide.
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2.发明授权HANDLE SUBSTRATE, COMPOSITE SUBSTRATE FOR SEMICONDUCTOR, AND SEMICONDUCTOR CIRCUIT BOARD AND METHOD FOR MANUFACTURING SAME 有权手柄基板，半导体复合材料基板及半导体电路板及其制造方法
公开(公告)号：EP2978009B1
公开(公告)日：2018-03-21
申请号：EP14873693.7
申请日：2014-12-16
申请人： NGK Insulators, Ltd.
IPC分类号： H01L21/02 , H01L27/12 , C01F7/02 , C04B35/64 , C04B37/00 , H01L23/15 , H01L21/762 , H01L29/06 , C04B35/115 , H01L21/683
CPC分类号： H01L21/76254 , C01F7/02 , C01P2006/60 , C04B35/10 , C04B35/115 , C04B35/64 , C04B37/001 , C04B2235/3206 , C04B2235/3225 , C04B2235/3244 , C04B2235/5409 , C04B2235/5445 , C04B2235/6025 , C04B2235/6562 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/786 , C04B2237/343 , C04B2237/70 , C04B2237/704 , H01L21/02002 , H01L21/6835 , H01L23/15 , H01L27/12 , H01L29/06 , H01L2221/68327 , H01L2221/68377 , H01L2221/68381
摘要： It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.
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3.发明授权GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME 有权氮化镓烧结体或氮化镓模制制品及其制造方法
公开(公告)号：EP2657208B1
公开(公告)日：2017-12-13
申请号：EP11850044.6
申请日：2011-12-20
申请人： Tosoh Corporation
CPC分类号： C23C14/3414 , C04B35/58 , C04B35/6261 , C04B35/62695 , C04B35/645 , C04B35/6455 , C04B37/026 , C04B41/009 , C04B41/515 , C04B41/88 , C04B2235/3286 , C04B2235/465 , C04B2235/5409 , C04B2235/656 , C04B2235/6562 , C04B2235/6586 , C04B2235/662 , C04B2235/723 , C04B2235/77 , C04B2235/80 , C04B2237/12 , C04B2237/36 , C04B2237/407 , C22C29/16 , Y10T428/249921 , C04B41/4521 , C04B41/4523
摘要： The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.
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4.发明授权KERAMISCHER VERBUNDWERKSTOFF, BESTEHEND AUS DEN HAUPTBESTANDTEILEN ALUMINIUMOXID UND ZIRKONOXID UND EINER DISPERSOIDEN PHASE 有权KERAMISCHER VERBUNDWERKSTOFF，BESTEHEND AUS DEN HAUPTBESTANDTEILEN ALUMINIUMOXID UND ZIRKONOXID UND EINER DISPERSOIDEN PHASE
公开(公告)号：EP2513010B1
公开(公告)日：2017-08-30
申请号：EP10798539.2
申请日：2010-12-16
申请人： CeramTec GmbH
发明人： KUNTZ, Meinhard , KUNTZ, Michael , GOTTWIK, Lukas , SCHLICHER, Kristina , MORHARDT, Andreas , FRIEDERICH, Kilian , SCHNEIDER, Norbert
IPC分类号： C04B35/645
CPC分类号： C04B35/6455 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3222 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3246 , C04B2235/5292 , C04B2235/5436 , C04B2235/5445 , C04B2235/662 , C04B2235/72 , C04B2235/765 , C04B2235/786 , C04B2235/80 , C04B2235/96
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5.发明授权RED LIGHT TRANSMITTING ZIRCONIA SINTERED BODY, METHOD FOR PRODUCING THE SAME, MATERIAL FORMED FROM THAT SINTERED BODY AND JEWELRY AND EXTERIOR COMPONENT USING THAT MATERIAL 有权红光透射氧化锆烧结体，其制备方法，由烧结体形成的材料和使用该材料的珠宝和外观组分
公开(公告)号：EP2546214B1
公开(公告)日：2017-06-21
申请号：EP11753283.8
申请日：2011-03-04
申请人： Tosoh Corporation
发明人： TSUKUMA, Koji
IPC分类号： C04B35/48 , C04B35/486
CPC分类号： C04B35/486 , B82Y30/00 , C04B35/6455 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3246 , C04B2235/3275 , C04B2235/5409 , C04B2235/5454 , C04B2235/549 , C04B2235/604 , C04B2235/6562 , C04B2235/661 , C04B2235/662 , C04B2235/762 , C04B2235/77 , C04B2235/786 , C04B2235/94 , C04B2235/963 , C04B2235/9653 , C04B2235/9661
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公开(公告)号：EP3113586A1
公开(公告)日：2017-01-04
申请号：EP15754711.8
申请日：2015-02-20
申请人： NGK Insulators, Ltd.
IPC分类号： H05K1/03 , C04B35/111 , H05K3/00
CPC分类号： H05K1/115 , C04B35/111 , C04B35/119 , C04B35/634 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3244 , C04B2235/3281 , C04B2235/3418 , C04B2235/6023 , C04B2235/606 , C04B2235/612 , C04B2235/6582 , C04B2235/662 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/95 , H01B3/12 , H01B17/56 , H05K1/03 , H05K1/0306 , H05K3/00 , H05K3/0014 , H05K3/0029 , H05K2201/09009 , Y10T428/24273
摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.
摘要翻译： 提供一种绝缘基板，其包括布置在绝缘基板中的用于导体的通孔。 绝缘基板的厚度为25〜100μm，贯通孔的直径为20〜100μm。 绝缘基板包括主体部分和暴露于通孔的暴露区域并且由氧化铝烧结体构成。 氧化铝烧结体的相对密度为99.5％或更高。 该氧化铝烧结体具有99.9％或更高的纯度，并且在所述主体部分中具有3至6μm的平均晶粒尺寸。 氧化铝颗粒在暴露区域为板状，平板状氧化铝颗粒的平均长度为8-25μm。
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公开(公告)号：EP3113585A1
公开(公告)日：2017-01-04
申请号：EP15750613.0
申请日：2015-02-24
申请人： NGK Insulators, Ltd.
IPC分类号： H05K1/03 , C04B35/111 , H05K3/00
CPC分类号： H05K1/115 , C04B35/111 , C04B35/119 , C04B35/634 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3244 , C04B2235/3281 , C04B2235/3418 , C04B2235/6023 , C04B2235/606 , C04B2235/612 , C04B2235/6582 , C04B2235/662 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/95 , H01B3/12 , H01B17/56 , H05K1/03 , H05K1/0306 , H05K3/00 , H05K3/0014 , H05K3/0029 , H05K2201/09009 , Y10T428/24273
摘要： It is provided an insulating substrate including through holes 2for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 µ m, respectively.
摘要翻译： 设置有绝缘基板，其包括布置在绝缘基板中的导体的通孔2。 绝缘基板的厚度为25〜300μm，通孔的直径为20〜100μm。 绝缘基板由氧化铝烧结体构成。 氧化铝烧结体的相对密度和平均粒径分别为99.5％以上且2〜50μm。
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8.发明公开HANDLE SUBSTRATE OF COMPOSITE SUBSTRATE FOR SEMICONDUCTOR, AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR 审中-公开操作基板的复合基板用于半导体的半导体和复合衬底
公开(公告)号：EP3107116A1
公开(公告)日：2016-12-21
申请号：EP15748537.6
申请日：2015-01-13
申请人： NGK Insulators, Ltd.
IPC分类号： H01L21/02
CPC分类号： H01L29/16 , C04B35/115 , C04B35/6264 , C04B35/632 , C04B35/634 , C04B37/001 , C04B37/005 , C04B37/008 , C04B2235/3206 , C04B2235/3225 , C04B2235/3244 , C04B2235/5409 , C04B2235/5445 , C04B2235/6023 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/786 , C04B2237/062 , C04B2237/064 , C04B2237/08 , C04B2237/34 , C04B2237/343 , C04B2237/36 , C04B2237/52 , C04B2237/588 , C30B29/06 , C30B33/06 , H01L21/2007 , H01L29/0649 , Y10T428/24355
摘要： A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 µm and a central part with an average grain size of 10 to 50 µm. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.
摘要翻译： 用于半导体的复合基板的手柄基板设置。 手柄基板是由多晶氧化铝组成。 手柄基板包括以20至55微米的平均晶粒尺寸，并用在10至50微米的平均晶粒尺寸的中央部外周缘的一部分。 外周边缘部的平均晶粒直径为1.1倍以上且3.0倍以下做了手柄基底的中心部分的。
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公开(公告)号：EP2930751A4
公开(公告)日：2016-09-14
申请号：EP14774099
申请日：2014-03-26
申请人： NGK INSULATORS LTD
发明人： IDE AKIYOSHI , IWASAKI YASUNORI , MIYAZAWA SUGIO
CPC分类号： H01L21/76251 , B23K20/00 , C04B35/111 , C04B35/115 , C04B35/565 , C04B35/581 , C04B35/587 , C04B37/001 , C04B37/005 , C04B2235/3206 , C04B2235/3225 , C04B2235/3244 , C04B2235/5409 , C04B2235/5445 , C04B2235/6562 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/72 , C04B2235/725 , C04B2235/963 , C04B2237/062 , C04B2237/064 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/708 , H01L21/02002 , H01L21/0243 , H01L21/187 , H01L21/2007 , H01L21/76254 , Y10T428/24355
摘要： A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.
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公开(公告)号：EP2689768A3
公开(公告)日：2015-09-02
申请号：EP13180444.5
申请日：2004-01-13
发明人： Cummings, Kevin M. , Rolf, Jacqueline C. , Rosenflanz, Anatoly Z. , Rusin, Richard P. , Swanson, Jerome E.
IPC分类号： A61K6/027 , A61K6/02 , C03C10/00 , C04B33/00 , C04B35/00 , C03C3/12 , C04B33/14 , C04B33/30 , C04B33/32 , C04B33/36 , A61K6/083
CPC分类号： C03C10/00 , A61K6/025 , A61K6/0255 , A61K6/0273 , A61K6/0276 , C03C3/125 , C04B33/14 , C04B33/30 , C04B33/32 , C04B33/36 , C04B35/18 , C04B35/44 , C04B35/50 , C04B35/6261 , C04B35/62625 , C04B35/62655 , C04B35/62665 , C04B35/64 , C04B35/645 , C04B2235/3201 , C04B2235/3203 , C04B2235/3205 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3241 , C04B2235/3244 , C04B2235/3246 , C04B2235/3248 , C04B2235/3251 , C04B2235/3265 , C04B2235/3272 , C04B2235/3418 , C04B2235/444 , C04B2235/447 , C04B2235/449 , C04B2235/52 , C04B2235/662 , C04B2235/72 , C04B2235/727 , C04B2235/80 , C04B2235/94 , C04B2235/96 , C04B2235/9607 , C04B2235/9615 , C04B2235/9653 , C23C8/36 , A61K6/083 , C08L33/14 , C08L33/02
摘要： The present invention relates to an article comprising at least one of a glass or glass-ceramic comprising Al 2 O 3 and at least one of REO or Y 2 O 3 , wherein at least 60 percent by weight of the glass or glass-ceramic comprise the Al 2 O 3 and the at least one of REO or Y 2 O 3 , and wherein the glass or glass-ceramic contains not more than 40 percent by weight collectively SiO 2 , B 2 O 3 , and P 2 O 5 , based on the total weight of the glass or glass-ceramic.
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