公开(公告)号：EP2754638A1

公开(公告)日：2014-07-16

申请号：EP12830501.8

申请日：2012-09-03

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： KINOSHITA, Tomoyuki ,  IWANAGA, Kohei ,  ASANO, Sachio ,  KAWABATA, Takahiro ,  OSHIMA, Noriaki ,  HIRAI, Satori ,  HARADA, Yoshinori ,  ARAI, Kazuyoshi ,  TADA, Ken-ichi

IPC分类号： C01B13/32 ,  C01B33/113 ,  C01G23/04 ,  C07F7/10 ,  C07F7/18 ,  C07F7/28 ,  H01L21/316

CPC分类号： C09D1/00 ,  C01B33/113 ,  C07F7/006 ,  C07F7/025 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02216 ,  H01L21/02282

摘要： An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

摘要翻译： 本发明的目的是提供一种低温下用作半导体元件或光学元件的IV族金属氧化物膜的制造方法。 本发明涉及一种IV族金属氧化物膜的制造方法，其特征在于，包括使用溶解在有机溶剂中的成膜材料涂布基板的表面，对所述基板进行热处理，紫外线照射处理或 使用这些处理，其中通过使具有特定结构的亚乙烯基二胺配合物与氧气，氧气，空气，臭氧，水和过氧化氢等氧化剂反应获得的成膜材料用作成膜材料。

公开(公告)号：EP2930179B1

公开(公告)日：2018-09-05

申请号：EP13860425.1

申请日：2013-12-06

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： TADA, Kenichi ,  YAMAMOTO, Toshiki ,  OIKE, Hiroyuki ,  MANIWA, Atsushi ,  CHIBA, Hirokazu ,  IWANAGA, Kohei ,  KAWANO, Kazuhisa

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/28568 ,  C07F7/02 ,  C07F15/0046 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

摘要： To provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas. [Chem. 1] (wherein R 1a to R 7a , R 8 , R 9 and R 10 to R 18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.)