公开(公告)号：EP3284102A1

公开(公告)日：2018-02-21

申请号：EP16707166.1

申请日：2016-02-17

申请人： Turun Yliopisto

发明人： KUZMIN, Mikhail ,  LAUKKANEN, Pekka ,  MUHAMMAD, Yasir ,  TUOMINEN, Marjukka ,  DAHL, Johnny ,  TUOMINEN, Veikko ,  MÄKELÄ, Jaakko ,  PUNKKINEN, Marko ,  KOKKO, Kalevi

IPC分类号： H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02255

摘要： A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

公开(公告)号：EP2638565A1

公开(公告)日：2013-09-18

申请号：EP11791014.1

申请日：2011-11-08

申请人： Turun yliopisto

发明人： LANG, Jouko ,  PUNKKINEN, Marko ,  TUOMINEN, Marjukka ,  TUOMINEN, Veikko ,  DAHL, Johnny ,  VÄYRYNEN, Juhani ,  LAUKKANEN, Pekka

IPC分类号： H01L21/316 ,  H01L21/02

CPC分类号： H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

摘要： A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.