公开(公告)号：EP4418831A1

公开(公告)日：2024-08-21

申请号：EP22880618.8

申请日：2022-08-04

申请人： National Institute of Advanced Industrial Science and Technology ,  ULVAC, Inc.

发明人： TOMINAGA, Junji ,  MIYATA, Noriyuki ,  ASANUMA, Shutaro ,  MIYAGUCHI, Yuusuke ,  SAITO, Kazuya ,  JINBO, Takehito ,  HORITA, Kazumasa ,  MASUDA, Takeshi

IPC分类号： H10B99/00 ,  H01L27/105 ,  H01L21/363 ,  H01L21/365 ,  H01L29/06 ,  H01L29/15 ,  H10N70/00

CPC分类号： H10B63/10 ,  H01L21/02107 ,  H01L27/105 ,  H01L29/06 ,  H10N70/00 ,  H01L29/15

摘要： Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body-forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at% to 10.0 at% into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100°C including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100°C or more and less than 170°C; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170°C or more and 400°C or less.

公开(公告)号：EP2624285B1

公开(公告)日：2020-08-26

申请号：EP11828339.9

申请日：2011-09-15

申请人： ULVAC, Inc.

发明人： MASUDA, Takeshi ,  IDENO, Takuya ,  KAJINUMA, Masahiko ,  ODAJIMA, Nobuhiro ,  UCHIDA, Yohei ,  SUU, Koukou

IPC分类号： H01L21/316 ,  C23C16/52 ,  H01L21/31 ,  C23C16/44

公开(公告)号：EP2624285A1

公开(公告)日：2013-08-07

申请号：EP11828339.9

申请日：2011-09-15

申请人： ULVAC, Inc.

发明人： MASUDA, Takeshi ,  IDENO, Takuya ,  KAJINUMA, Masahiko ,  ODAJIMA, Nobuhiro ,  UCHIDA, Yohei ,  SUU, Koukou

IPC分类号： H01L21/316 ,  C23C16/52 ,  H01L21/31

CPC分类号： C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

摘要： In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

摘要翻译： 为了提供一种薄膜制造方法和薄膜的制造装置，worin薄膜以良好的再现可以以低成本制造，并且在某种程度上worin资源被保存，虚设基片（S2）被输送到腔室 （51）伪处理气体被供给到伪基片（S2）中，产物的底物（S3）被输送到腔室（51），并且从伪处理气体原料气体不同的，并且包含用于制造。其中金属材料 与金属有机化学汽相沉积（MOCVD）方法的薄膜，被供给至产物的底物（S3）。 由于原料气体不被用作虚设处理气体，的情况下使用的金属材料的量可以被抑制，并具有良好的再现性的薄膜可以以低成本制造，并且在某种程度上worin资源被保存。

公开(公告)号：EP2053642A1

公开(公告)日：2009-04-29

申请号：EP07791665.8

申请日：2007-07-31

申请人： Ulvac, Inc.

发明人： MASUDA, Takeshi ,  KAJINUMA, Masahiko ,  NISHIOKA, Yutaka ,  KIMURA, Isao ,  KIKUCHI, Shin ,  YAMADA, Takakazu ,  SUU, Koukou

IPC分类号： H01L21/316

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  C23C16/02 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65

摘要： A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.

摘要翻译： 将具有PZT（111）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：形成氧化膜 在基膜的表面上，其平面间距比贵金属更接近PZT（111）; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：EP2620975A1

公开(公告)日：2013-07-31

申请号：EP11826558.6

申请日：2011-09-13

申请人： Ulvac, Inc.

发明人： MASUDA, Takeshi ,  KAJINUMA, Masahiko ,  IDENO, Takuya ,  ODAJIMA, Nobuhiro ,  UCHIDA, Yohei ,  SUU, Koukou

IPC分类号： H01L21/316 ,  C01G25/02 ,  C23C16/455 ,  H01L21/8246 ,  H01L27/105

CPC分类号： C23C16/455 ,  C01G25/00 ,  C01P2002/34 ,  C01P2004/03 ,  C01P2006/40 ,  C23C16/409 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55

摘要： [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness. [Solution] This thin film production process comprises: supplying a mixed gas to a substrate (S) that is placed in a chamber (51) and has been heated, wherein the mixed gas comprises a metal raw material gas that serves as a raw material for a dielectric thin film having perovskite-type crystals and an oxidation gas that can react with the metal raw material gas; stopping the supply of the metal raw material gas to the substrate (S); and, subsequent to the stopping of the supply of the metal raw material gas, limiting the supply of the oxidation gas to the substrate (S).

摘要翻译： 为了提供薄膜制造方法和薄膜制造装置，能够制造表面粗糙度小的电介质薄膜。 [解决方案]该薄膜制造方法包括：将混合气体供给到放置在室（51）中并被加热的基板（S），其中混合气体包括用作原料的金属原料气体 用于具有钙钛矿型结晶的电介质薄膜和可与金属原料气体反应的氧化气体; 停止向基板（S）供给金属原料气体; 并且在停止供给金属原料气体之后，限制氧化气体供给到基板（S）。

公开(公告)号：EP2053643A1

公开(公告)日：2009-04-29

申请号：EP07791669.0

申请日：2007-07-31

申请人： Ulvac, Inc.

发明人： MASUDA, Takeshi ,  KAJINUMA, Masahiko ,  NISHIOKA, Yutaka ,  KIMURA, Isao ,  KIKUCHI, Shin ,  YAMADA, Takakazu ,  SUU, Koukou

IPC分类号： H01L21/316

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65 ,  H01L41/1876 ,  H01L41/316

摘要： A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

摘要翻译： 将具有PZT（001）或PZT（100）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤： 在基膜的表面进行还原处理; 并通过MOCVD法在基膜的表面上形成结晶膜。