公开(公告)号：EP0076139A2

公开(公告)日：1983-04-06

申请号：EP82305098.4

申请日：1982-09-28

申请人： UNISYS CORPORATION

发明人： Elmasry, Mohamed Ibrahim ,  Peterson, Luverne Ray

IPC分类号： G11C11/34 ,  G11C11/36

CPC分类号： G11C11/39 ,  G11C11/36

摘要： Disclosed is an improved static memory cell comprised of first and second conductive means for carrying respective bias voltages in the cell, a third conductive means for carrying an inpuvoutput voltage signal in the cell, and a Lambda diode coupled between the first and third conductive means for there providing a negative dynamic resistance whenever the input/output voltage signal is within a predetermined range between the bias voltages on the first and second conductive means, with the improvement being a voltage dependent resistance means coupled between the second and third conductive means for there providing a negative dynamic resistance in response to at least some of the input/output voltages within said range.