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1.发明公开SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION 审中-公开SEMI POLAR OPTO ELECTRONIC III族氮化物器件的M-PLANE SUBSTRATES COUPAGES小于15度的C方向
公开(公告)号：EP2543119A4
公开(公告)日：2015-08-12
申请号：EP11751456
申请日：2011-03-04
申请人： UNIV CALIFORNIA
发明人： HSU PO SHAN , KELCHNER KATHRYN M , FARRELL ROBERT M , HAEGER DANIEL A , OHTA HIROAKI , TYAGI ANURAG , NAKAMURA SHUJI , DENBAARS STEVEN P , SPECK JAMES S
IPC分类号： H01S5/00 , B82Y20/00 , H01L21/02 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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2.发明公开SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE 审中-公开ON HALBPOLAREM氮化物为基础的设备部分或完全平滑合金偏置OFFSET在界面HETEROFLEXIBLE
公开(公告)号：EP2467872A4
公开(公告)日：2013-10-09
申请号：EP10810719
申请日：2010-08-23
申请人： UNIV CALIFORNIA
发明人： OHTA HIROAKI , WU FENG , TYAGI ANURAG , CHAKRABORTY ARPAN , SPECK JAMES S , DENBAARS STEVEN P , NAKAMURA SHUJI , YOUNG ERIN C
IPC分类号： H01L21/20 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
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3.发明公开ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 审中-公开各向异性应力的HALF POLARNITRIDQUANTUMSBOHRLÖCHERNCONTROL通过与OFFSET SHIFT部分或完全的平滑铝铟镓氮化物层
公开(公告)号：EP2467877A4
公开(公告)日：2013-10-09
申请号：EP10810724
申请日：2010-08-23
申请人： UNIV CALIFORNIA
发明人： OHTA HIROAKI , WU FENG , TYAGI ANURAG , CHAKRABORTY ARPAN , SPECK JAMES S , DENBAARS STEVEN P , NAKAMURA SHUJI , YOUNG ERIN C
IPC分类号： H01L21/20 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
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