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    EMITTER SEMICONDUCTOR LASER TYPE OF DEVICE
    2.
    发明公开
    EMITTER SEMICONDUCTOR LASER TYPE OF DEVICE 审中-公开
    发射器半导体激光装置

    公开(公告)号：EP3304659A1

    公开(公告)日：2018-04-11

    申请号：EP15894465.2

    申请日：2015-06-05

    Applicant: Petrescu-Prahova, Iulian Basarab

    Inventor： Petrescu-Prahova, Iulian Basarab

    IPC: H01S3/063

    CPC classification number: H01S5/1082 ,  H01S5/1014 ,  H01S5/125 ,  H01S5/2031 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/343 ,  H01S2301/185

    Abstract: Semiconductor laser device with mirror protection includes transversally a structure with a double waveguide, consisting of an active waveguide and a separated or adjacent trapping waveguide, and longitudinally a main segment and end segments, the thickness of the upper cladding of the end segments being gradually decreased toward the mirrors. In the main segment, the field distribution is asymmetric, preponderantly located in the lower cladding. In the end segments, the field distribution gradually further shifts toward the lower cladding. Along the end segments, the fundamental mode confinement factor Γ is gradually and substantially reduced. The reduction of the confinement factor Γ protects against degradation the projection of the active region on the exit mirrors, the laser element most sensitive to degradation.

    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    9.
    发明公开
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    氮化物半导体发光元件

    公开(公告)号：EP2779333A1

    公开(公告)日：2014-09-17

    申请号：EP12843889.2

    申请日：2012-06-22

    Applicant: Sumitomo Electric Industries, Ltd. ,  Sony Corporation

    Inventor： KYONO Takashi ,  ENYA Yohei ,  UENO Masaki ,  YANASHIMA Katsunori ,  TASAI Kunihiko ,  NAKAJIMA Hiroshi ,  FUTAGAWA Noriyuki

    IPC: H01S5/343 ,  H01S5/22

    CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A nitride semiconductor light emitting device having a structure capable of reducing a lateral spread of carriers flowing from a semiconductor ridge is provided. In the semiconductor laser on the {20-21} plane, two-dimensional hole gas is created at the heterojunction in a hole band. When the heterojunction that generates two-dimensional hole gas is located outside the semiconductor ridge, the two-dimensional hole gas causes carriers in the lateral direction to spread in the p-side semiconductor region. On the other hand, two-dimensional hole gas cannot be generated at the heterojunction in the hole band in the semiconductor laser on the c-plane. When the heterojunction HJ is contained in the semiconductor ridge, two-dimensional hole gas does not cause carriers flowing out of the semiconductor ridge to spread in the lateral direction.

    Abstract translation: 提供了一种氮化物半导体发光器件，该氮化物半导体发光器件具有能够减小从半导体脊流动的载流子的横向扩展的结构。 在{20-21}面的半导体激光器中，在空穴带的异质结中产生二维空穴气体。 当产生二维空穴气体的异质结位于半导体脊的外部时，二维空穴气体导致横向载流子扩散到p侧半导体区域中。 另一方面，在c面上的半导体激光器的空穴带中的异质结处不能产生二维空穴气体。 当异质结HJ被包含在半导体脊中时，二维空穴气不会导致从半导体脊流出的载流子在横向方向上扩散。

    Nitride semiconductor laser element
    10.
    发明公开
    Nitride semiconductor laser element 有权
    Nitrid-Halbleiterlaserelement

    公开(公告)号：EP2736130A2

    公开(公告)日：2014-05-28

    申请号：EP13194375.5

    申请日：2013-11-26

    Applicant: Nichia Corporation

    Inventor： Masui, Shingo

    IPC: H01S5/20 ,  H01S5/343

    CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/34333

    Abstract: To realize a nitride semiconductor laser element having improved internal quantum efficiency. The nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; wherein the n-type semiconductor layer includes an n-side optical guide layer; wherein the active layer includes two or more well layers, and at least one barrier layer provided between the well layers; wherein the barrier layer includes a barrier layer having band gap energy higher than that of the n-side optical guide layer; wherein the p-type semiconductor layer includes: an electron barrier layer having band gap energy higher than that of all barrier layers included in the active layer, and a p-side optical guide layer provided between a final well layer, that is a well layer nearest to the p-type semiconductor layer of the two or more well layer, and the electron barrier layer; and wherein the p-side optical guide layer includes: a first region that is disposed on a side of the final well layer and has band gap energy lower than that of the n-side optical guide layer, and a second region that is disposed on a side of the electron barrier layer and has band gap energy higher than that of the n-side optical guide layer.

    Abstract translation: 实现具有提高的内部量子效率的氮化物半导体激光元件。 氮化物半导体激光元件包括在n型半导体层和p型半导体层之间的n型半导体层，p型半导体层和有源层; 其中所述n型半导体层包括n侧光导层; 其中所述有源层包括两个或更多个阱层，以及设置在所述阱层之间的至少一个势垒层; 其中所述阻挡层包括具有比n侧光导层的带隙能量高的带隙能量的阻挡层; 其中所述p型半导体层包括：具有比所述有源层中包括的所有势垒层的带隙能量高的带隙能量的电子势垒层，以及设置在最终阱层之间的p侧导光层，即阱层 最靠近两个或更多个阱层的p型半导体层和电子势垒层; 并且其中所述p侧光导层包括：第一区域，其设置在所述最终阱层的一侧上，并且具有低于所述n侧光导层的带隙能量的带隙能量;以及第二区域， 电子势垒层的一侧，并且具有比n侧光导层高的带隙能量。

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