公开(公告)号：EP2727154A4

公开(公告)日：2015-03-04

申请号：EP12804913

申请日：2012-07-02

申请人： UNIV FLORIDA ,  NANOHOLDINGS LLC

发明人： SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

IPC分类号： H01L31/10 ,  H01L51/44 ,  H01L51/52

CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022491 ,  H01L31/035218 ,  H01L31/09 ,  H01L31/143 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0084 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/442 ,  H01L51/5048 ,  H01L51/56 ,  H01L2031/0344 ,  H04N5/33 ,  Y02E10/549

摘要： Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

公开(公告)号：EP2666190A4

公开(公告)日：2017-07-26

申请号：EP11859661

申请日：2011-10-13

申请人： UNIV FLORIDA ,  NANOHOLDINGS LLC

发明人： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA ,  LEE JAE WOONG

IPC分类号： H01L51/42 ,  B82Y30/00 ,  H01L51/52

CPC分类号： H01L51/426 ,  B82Y30/00 ,  H01L51/50 ,  H01L2251/5369 ,  Y02E10/549

公开(公告)号：EP2948984A4

公开(公告)日：2016-08-24

申请号：EP14791448

申请日：2014-01-23

申请人： UNIV FLORIDA

发明人： KIM DO YOUNG ,  SO FRANKY ,  LEE JAE WOONG

IPC分类号： H01L27/146 ,  H01L27/30

CPC分类号： H01L27/14649 ,  H01L27/14694 ,  H01L27/283 ,  H01L27/307

摘要： An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots.