公开(公告)号：EP3905250A1

公开(公告)日：2021-11-03

申请号：EP20184796.9

申请日：2020-07-08

申请人： United Microelectronics Corp.

发明人： WANG, Hui-Lin ,  HSU, Po-Kai ,  JHANG, Jing-Yin ,  WANG, Yu-Ping ,  CHEN, Hung-Yueh ,  CHEN, Wei

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

摘要： A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.