公开(公告)号：EP2356692A2

公开(公告)日：2011-08-17

申请号：EP09825456.8

申请日：2009-11-06

申请人： United Solar Ovonic LLC

发明人： XU, Xixiang ,  GUHA, Subhendu ,  YANG, Chi ,  YUE, Guozhen ,  BEGLAU, David, Alan ,  LI, Yang ,  JONES, Scott ,  YANG, Baojle

IPC分类号： H01L31/042

CPC分类号： H01L31/075 ,  H01L31/0284 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03767 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A hydrogenated, silicon based semiconductor alloy has a defect density of less than 10
16 cm
-3 . The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon- germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.