摘要:
The invention concerns a microsphere of silicon with a diameter between 0.1 and 50 micras capable of functioning as an optical microcavity with Mie resonant modes for wavelengths in the range between 1 and 15 micras, and a photonic sponge formed from the former. Preparation thereof is achieved by means of a simple method based on the decomposition by heating of the gaseous precursors. The use of these microspheres and photonic sponges are useful for manufacturing photonic devices, for example, solar cells, photo diodes, lasers and sensors.
摘要:
A solar cell having improved efficiency and its method of manufacture includes: forming a porous layer on a surface of a semiconductor substrate; spraying a compound containing a dopant on the porous layer; and forming an emitter layer on the surface of the semiconductor substrate by diffusing the dopant.
摘要:
An energy conversion device (10) includes a plurality of pores (14) formed within a substrate (12) and a junction region disposed within each of the plurality of pores (14) where each of the junction regions has a depletion region (20) Each of the plurality of pores (14) defines an opening size in the substrate (12) and a spacing from adjacent pores so that the depletion regions of each of the pores are at least substantially in contact with the depletion region of the pores which are adjacent.
摘要:
Voltage breakdown devices for solar cells are described. For example, a solar cell includes a semiconductor substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A plurality of conductive contacts is coupled to the plurality of alternating N-type and P-type semiconductor regions. A voltage breakdown device is disposed above the substrate. The voltage breakdown device includes one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate.
摘要:
A hydrogenated, silicon based semiconductor alloy has a defect density of less than 10 16 cm -3 . The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon- germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
摘要:
An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
摘要:
The present invention generally comprises a solar cell and a solar cell fabrication process. Photogenerated electrons and electron-holes may have a short lifetime or low mobility that permits the electrons or electron-holes to recombine before reaching the junction. A percolating solar cell device may shorten the distance that the electrons and electron-holes need to travel to reach the junction. The percolating solar cell may be formed by depositing a silicon containing layer with poragens and then decomposing the poragens to create openings such as pores in the silicon containing layer. In one embodiment, the silicon containing layer is deposited and then etched anodically to create openings in the silicon containing layer. The layer deposited over the silicon containing layer may extend into the openings. By extending into the openings, the distance to the junction for electrons and electron-holes may be reduced and more electrons and electron-holes may reach the junction.
摘要:
An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.