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    MELT-GROWTH OF SINGLE-CRYSTAL ALLOY SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR ASSEMBLIES INCORPORATING SUCH STRUCTURES
    2.
    发明公开
    MELT-GROWTH OF SINGLE-CRYSTAL ALLOY SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR ASSEMBLIES INCORPORATING SUCH STRUCTURES 审中-公开
    熔炼采用此构造增长-EINKRISTALLLEGIERUNGSHALBLEITERSTRUKTUREN和半导体安排

    公开(公告)号：EP3152780A1

    公开(公告)日：2017-04-12

    申请号：EP15727645.2

    申请日：2015-06-05

    申请人： University Of Southampton

    发明人： GARDES, Frederic Yannick ,  REED, Graham Trevor ,  LITTLEJOHNS, Callum George

    IPC分类号： H01L21/20

    CPC分类号： C30B29/52 ,  C30B13/14 ,  C30B13/22 ,  C30B13/34 ,  C30B29/06 ,  C30B29/08 ,  C30B29/18 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/02625 ,  H01L21/02647 ,  H01L21/02667 ,  H01L21/02675

    摘要： A method of fabricating at least one single-crystal alloy semiconductor structure, comprising: forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in the main body of the respective structural form away from the respective seed; wherein the plurality of elements of each structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective structural form.

    摘要翻译： 单晶半导体合金结构或制造该包括方法：形成包含在基片3的合金化材料的种子7; 在基片上提供的基质材料的结构形状11全部是结晶以形成单晶合金半导体结构，所述结构形式，其包含从所述种子并连接成间隔关系的元素33的多元性延伸的主体31 主体; 施加热寻没结构形状具有液体状态; 和冷却检查没有在种子上的结构形式成核并结晶为单晶合金，以提供到半导体结构。 在一个，实施例的元件的多元性提供在液体状态下的合金化材料的贮存器，谋求确实元件的多个相继作用在液体状态下保持在至生长前的单晶的合金化材料的可用供给 在respectivement结构形式的主体。在一个实施方案中，主体材料可以是锗和合金化材料可以是硅树脂。