ROTATING DISK REACTOR WITH FERROFLUID SEAL FOR CHEMICAL VAPOR DEPOSITION
    1.
    发明公开
    ROTATING DISK REACTOR WITH FERROFLUID SEAL FOR CHEMICAL VAPOR DEPOSITION 审中-公开
    DREHPLATTENREAKTOR MIT FERROFLUIDDICHTUNGFÜRCHEMISCHE DAMPFABLAGERUNG

    公开(公告)号:EP2850221A1

    公开(公告)日:2015-03-25

    申请号:EP13791326.5

    申请日:2013-05-09

    Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

    Abstract translation: 用于化学气相沉积的旋转盘式反应器包括真空室和铁磁流体馈通,其包括将电动机轴传递到真空室中的上下铁磁流体密封件。 电动机联接到电动机轴并且位于上部和下部铁磁流体密封件之间的大气区域中。 转盘位于真空室中并联接到电动机上,使得电动机以期望的转速旋转转台。 电介质支撑件联接到转盘,使得当由轴驱动时,转台旋转电介质支架。 衬底载体位于用于化学气相沉积处理的真空室中的电介质支撑体上。 加热器位于基板载体附近,将基板载体的温度控制到用于化学气相沉积的所需温度。

    METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION
    2.
    发明公开
    METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
    方法及系统现场校准高温计

    公开(公告)号:EP2659244A1

    公开(公告)日:2013-11-06

    申请号:EP11817495.2

    申请日:2011-12-22

    CPC classification number: G01J5/0003 G01J5/0007 G01J2005/0048

    Abstract: A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

    KEYED WAFER CARRIER
    3.
    发明公开
    KEYED WAFER CARRIER 有权
    CODIERTERWAFERTRÄGER

    公开(公告)号:EP2828886A1

    公开(公告)日:2015-01-28

    申请号:EP13763498.6

    申请日:2013-03-01

    Abstract: A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

    Abstract translation: 化学气相沉积反应器的结构理想地包括具有内部的反应室,安装在反应室中的主轴和可释放地安装到主轴上以与其一起旋转的晶片载体。 主轴理想地具有沿着垂直旋转轴线延伸的轴和从轴向外突出的键。 晶片载体优选地具有限定相对面对的顶部和底部表面的主体和至少一个晶片保持特征,其被构造成使得晶片可以保持在其中,其中晶片的表面暴露在主体的顶部表面。 晶片载体理想地还具有从主体的底表面延伸到主体中的凹槽和沿着第一横向轴线从凹部的周边向外突出的键槽。 轴优选地接合在凹部中,并且键优选地接合到键槽中。

    EXHAUST FOR CVD REACTOR
    4.
    发明公开
    EXHAUST FOR CVD REACTOR 有权
    FOR CVD反应器气体出口

    公开(公告)号:EP2601329A1

    公开(公告)日:2013-06-12

    申请号:EP11746716.7

    申请日:2011-08-02

    Abstract: A chemical vapor deposition reactor 10 and a method of wafer processing are provided. The reactor 10 includes a reaction chamber 12 having an interior 26, a gas inlet manifold 14 communicating with the interior of the chamber, an exhaust system 70 including an exhaust manifold 72 having a passage 78 and one or more ports 76, and one or more cleaning elements 80 mounted within the chamber. The gas inlet manifold 14 can admit process gasses to form a deposit on substrates 58 held within the interior 26. The passage 78 can communicate with the interior 26 of the chamber 12 through the one or more ports 76. The one or more cleaning elements 80 are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports 76.

Patent Agency Ranking