公开(公告)号：EP3163642A1

公开(公告)日：2017-05-03

申请号：EP16162207

申请日：2016-03-24

Applicant: WINBOND ELECTRONICS CORP

Inventor： HSU PO-YEN ,  SHEN TING-YING ,  HO CHIA-HUA ,  FU CHIH-CHENG ,  CHEN FREDERICK

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/16 ,  H01L45/1675 ,  H01L45/1683

Abstract: Provided are a resistive memory and a method of fabricating the resistive memory. The resistive memory includes a first electrode, a second electrode, a variable resistance layer, an oxygen exchange layer, and a protection layer. The first electrode and the second electrode are arranged opposite to each other. The variable resistance layer is arranged between the first electrode and the second electrode. The oxygen exchange layer is arranged between the variable resistance layer and the second electrode. The protection layer is arranged at least on sidewalls of the oxygen exchange layer.

Abstract translation: 提供了电阻式存储器和制造该电阻式存储器的方法。 电阻式存储器包括第一电极，第二电极，可变电阻层，氧气交换层和保护层。 第一电极和第二电极彼此相对地布置。 可变电阻层布置在第一电极和第二电极之间。 氧气交换层布置在可变电阻层和第二电极之间。 保护层至少设置在氧气交换层的侧壁上。