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公开(公告)号：EP2514050A4
公开(公告)日：2018-01-03
申请号：EP10842392
申请日：2010-10-07
发明人： BOTEZ DAN , MAWST LUKE J
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
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