公开(公告)号：EP3294531A1

公开(公告)日：2018-03-21

申请号：EP16793191

申请日：2016-05-03

申请人： WISCONSIN ALUMNI RES FOUNDATION

发明人： MACKIE THOMAS ROCKWELL ,  WALKER BRANDON JOSEPH

IPC分类号： B29C67/00 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02

CPC分类号： B22F3/1055 ,  B22F2003/1057 ,  B33Y30/00 ,  B33Y50/02 ,  Y02P10/295

摘要： A 3-D printer scalable to large sizes employs a combination of mechanical and electrical scanning of a linear array of electron beams that operate to melt material of a powder bed. A housing holding the electron beam sources may be maintained at a high vacuum and positioned close to a print surface to minimize electron travel in a softer vacuum surrounding a print bed.

公开(公告)号：EP3180798A4

公开(公告)日：2018-03-21

申请号：EP15866697

申请日：2015-08-25

申请人： WISCONSIN ALUMNI RES FOUNDATION ,  UNIV OF HAMBURG ,  THE UNIV OF MASSACHUSETTS

发明人： BLICK ROBERT H ,  RODRIQUEZ JONATHAN ,  KIM HYUNSEOK ,  AKSAMIJA ZLATAN ,  HANSEN WOLFGANG ,  HEYN CHRISTIAN

IPC分类号： H01J49/02 ,  G01T1/20

CPC分类号： G01N21/64 ,  G01T1/20 ,  H01J49/025 ,  H01J49/26

摘要： A detector suitable for mass spectroscopy uses a thin membrane that converts the kinetic energy of impinging molecules into corresponding photons, the latter detected with a suitable photosensor. The arrival of molecules at the membrane is detected by detection of the corresponding photons.

公开(公告)号：EP2603959A4

公开(公告)日：2018-01-03

申请号：EP11816734

申请日：2011-06-03

申请人： WISCONSIN ALUMNI RES FOUNDATION

发明人： BOTEZ DAN ,  SHIN JAE CHEOL

IPC分类号： H01S5/34

CPC分类号： H01L29/122 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3402 ,  H01S5/3407

摘要： Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.

公开(公告)号：EP2514050A4

公开(公告)日：2018-01-03

申请号：EP10842392

申请日：2010-10-07

申请人： WISCONSIN ALUMNI RES FOUNDATION

发明人： BOTEZ DAN ,  MAWST LUKE J

IPC分类号： H01S5/30 ,  H01S5/34 ,  H01S5/40

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/2224 ,  H01S5/3213 ,  H01S5/4031 ,  H01S5/4081

摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.