专利检索 ap:("Wisconsin Alumni Research Foundation") AND inv:"MA, Zhenqiang" 第 1 页

1.

发明公开
HETEROGENEOUS TUNNELING JUNCTIONS FOR HOLE INJECTION IN NITRIDE BASED LIGHT-EMITTING DEVICES 审中-公开

公开(公告)号：EP3776671A1

公开(公告)日：2021-02-17

申请号：EP19782035.0

申请日：2019-04-03

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang , LIU, Dong

IPC分类号： H01L33/00 , H01L33/04 , H01L33/32 , H01L33/16 , H01L33/36

2.

发明公开
VANADIUM DIOXIDE-BASED OPTICAL AND RADIOFREQUENCY SWITCHES 审中-公开

公开(公告)号：EP3593374A1

公开(公告)日：2020-01-15

申请号：EP18764931.4

申请日：2018-02-23

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang , EOM, Chang-Beom , LEE, Jaeseong , LEE, Daesu , CHO, Sang June , LIU, Dong

IPC分类号： H01L21/02 , H01L29/10 , H01L29/24 , H01L29/66 , H01L29/78 , H01L45/00 , H03K17/04 , H03K17/51 , H03K17/687

3.

发明授权
PIN DIODES FOR PHOTODETECTION AND HIGH-SPEED, HIGH-RESOLUTION IMAGE SENSING 有权

公开(公告)号：EP2033227B1

公开(公告)日：2020-02-12

申请号：EP07762196.9

申请日：2007-05-15

申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

发明人： LAGALLY, Max G. , MA, Zhenqiang

IPC分类号： H01L31/105 , H01L31/028 , H01L31/18 , H01L27/144 , H01L27/146 , H01L29/04

4.

发明公开
ALUMINUM NITRIDE-ALUMINUM OXIDE LAYERS FOR ENHANCING THE EFFICIENCY OF GROUP III-NITRIDE LIGHT-EMITTING DEVICES 审中-公开

公开(公告)号：EP3692571A1

公开(公告)日：2020-08-12

申请号：EP18864537.8

申请日：2018-10-04

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang , KIM, Kwangeun

IPC分类号： H01L23/32 , H01L33/06 , H01L33/00

5.

发明授权
HYBRID HETEROSTRUCTURE LIGHT-EMITTING DEVICES 有权

公开(公告)号：EP3204965B1

公开(公告)日：2020-11-25

申请号：EP15848458.4

申请日：2015-10-05

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang , SEO, Jung-Hun

IPC分类号： H01L33/04 , H01L33/00 , H01L33/32 , H01S5/34 , H01S5/30

6.

发明公开
HYBRID HETEROSTRUCTURE LIGHT-EMITTING DEVICES 审中-公开
标题翻译：混合异质结构发光器件

公开(公告)号：EP3204965A1

公开(公告)日：2017-08-16

申请号：EP15848458.4

申请日：2015-10-05

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang , SEO, Jung-Hun

IPC分类号： H01L33/04

CPC分类号： H01L33/06 , H01L21/283 , H01L27/156 , H01L31/0328 , H01L33/0008 , H01L33/0016 , H01L33/0079 , H01L33/0083 , H01L33/04 , H01L33/28 , H01L33/32 , H01S5/105 , H01S5/18369 , H01S5/20 , H01S5/3095

摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.

摘要翻译： 提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用这些器件的方法。器件由多层半导体异质结构组成。该器件包括一个或多个界面层材料，其允许电流在本征有源区与p型和/或n型掺杂电荷注入层之间的界面处穿过晶格失配的异质结而隧穿。

7.

发明公开
PIN DIODES FOR PHOTODETECTION AND HIGH-SPEED, HIGH-RESOLUTION IMAGE SENSING 审中-公开
标题翻译： PIN二极管用于光检测和快速高分辨率图像捕捉

公开(公告)号：EP2033227A2

公开(公告)日：2009-03-11

申请号：EP07762196.9

申请日：2007-05-15

申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

发明人： LAGALLY, Max G. , MA, Zhenqiang

IPC分类号： H01L31/00 , H01L29/10 , H01L29/04

摘要： The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.