FET BIAS CIRCUIT
    1.
    发明公开
    FET BIAS CIRCUIT 有权
    FET偏置电路

    公开(公告)号:EP1777812A4

    公开(公告)日:2007-08-29

    申请号:EP05745432

    申请日:2005-04-18

    申请人: YAN YUEJUN

    发明人: YAN YUEJUN

    IPC分类号: H03F1/30 H03B1/04 H03F3/16

    摘要: The invention discloses a FET (Field Effect Transistor) bias circuit, including current changing information circuit that has a power source resistance connected with the signal output end of this circuit, the other end of the resistance is connected with a reference voltage source, and the node between the resistance and the current changing information circuit acts as the output end providing the voltage changing information; and a voltage divider circuit connected with at least one voltage source, the voltage divider circuit is connected with the output end providing the voltage changing information; the current in a signal action FET is controlled by providing the voltage changing information at the output end to the voltage divider circuit and getting a dividing voltage from the voltage divider circuit to be a output end of the FET bias circuit. The bias circuit of the invention can make the static drain current of the signal action FET to remain constant, and reduce the deviation of the static drain current of the signal action FET of each chip in the whole wafer and its cost is low, its area is small, and it is easy to be integrated and fabricated.

    VARIABLE ATTENUATOR
    2.
    发明公开
    VARIABLE ATTENUATOR 审中-公开
    可变衰减器

    公开(公告)号:EP1804329A4

    公开(公告)日:2007-10-10

    申请号:EP05755038

    申请日:2005-06-17

    IPC分类号: H01P1/22

    CPC分类号: H01P1/227

    摘要: The present invention relates to a variable attenuator. The attenuator comprises: a substrate on which a first film resistor is located, both ends of the first film resistor are electrically connected to an input port and an output port respectively, both ends of the first film resistor are also electrically connected to one end of a third film resistor and one end of a fortieth film resistor respectively, the other end of the third film resistor and the other end of the fortieth film resistor are electrically connected to the same end of a second film resistor, and the other end of the second film resistor is coupled to the ground; a first conductive sheet and a second conductive sheet which are respectively electrically connected to the first film resistor and the second film resistor to change the resistance of the first film resistor and the resistance of the second film resistor respectively; and an insulator on which the first conductive sheet and the second conductive sheet are fixed. The present invention is adaptive to apply in high frequency and microwave circuits and systems, and has the advantages in wide band, small size, fabricating easily and low cost.

    TEMERATURE COMPENSATION ATTENUATOR
    3.
    发明公开
    TEMERATURE COMPENSATION ATTENUATOR 有权
    ATT温度补偿

    公开(公告)号:EP1750369A4

    公开(公告)日:2007-09-19

    申请号:EP05752224

    申请日:2005-04-28

    IPC分类号: H03H7/24 H03F1/30 H03H7/25

    摘要: The present invention discloses a temperature compensation attenuator, comprising: a base (6), a thin film thermistor (1) on the base (6), an input terminal (3) and an output terminal (4) which are connected to the two ends of the thin film thermistor (1) respectively, and a thermistor (2), the top side of the thermistor (2) is electronically connected to the bottom side of the thermistor (1), the bottom side of the thermistor (2) is electronically connected to the ground. By connecting the temperature compensation attenuator of the present invention to the high frequency and microwave active circuit, it can compensate variance of the gain of the high frequency and microwave active device or the drift of the frequency characteristic of the active device due to the temperature variance. The temperature compensation attenuator of the present invention can be used in various of high frequency and microwave circuits and systems in particular, suitable for mobile communication systems, satellite communication systems and radar systems which require a strict temperature characteristic.