公开(公告)号：EP3331034A1

公开(公告)日：2018-06-06

申请号：EP16202201.6

申请日：2016-12-05

申请人： ams International AG

发明人： Meinhardt, Gerald ,  Wachmann, Ewald ,  Sagmeister, Martin ,  Hofrichter, Jens

IPC分类号： H01L31/115 ,  H01L31/103 ,  H01L31/0352 ,  H01L31/0224 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L31/115 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14663 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： A CMOS compatible photodiode device comprises a substrate (1) of semiconductor material with a main surface (10) and a plurality of doped wells (3) of a first type of conductivity constituting one pixel of an array of pixels for image detection. The doped wells (3) are spaced apart at the main surface (10). The device further has a guard ring (7) comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring (7) surrounds an area of the main surface (10) including the plurality of doped wells (3) without dividing this area. Conductor tracks (4) are electrically connected with the doped wells (3), which are thus interconnected, and further conductor tracks (5) are electrically connected with a region of the second type of conductivity. A doped surface region (2) of the second type of conductivity is present at the main surface (10) and covers the entire area between the guard ring (7) and the doped wells (3). The photodiode of the pixel is radiation-hard, has high speed, low capacitance, low leakage current and a low temperature coefficient of the responsivity.