公开(公告)号：EP3419050A1

公开(公告)日：2018-12-26

申请号：EP17177707.1

申请日：2017-06-23

申请人： ams International AG

发明人： Hofrichter, Jens ,  Meynants, Guy ,  Pertl, Josef ,  Troxler, Thomas

IPC分类号： H01L23/04 ,  H01L23/08 ,  H01L23/552 ,  H01L23/29 ,  H01L23/31 ,  H01L25/16 ,  H01L23/18

CPC分类号： H01L23/3121 ,  H01L23/18 ,  H01L23/29 ,  H01L23/552 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/167 ,  H01L27/14618 ,  H01L2224/04042 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48477 ,  H01L2224/73265 ,  H01L2924/01016 ,  H01L2924/01034 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/16251 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The package includes a carrier (1) and an electronic device (2) on the carrier. A nanomaterial is provided for improved X-ray radiation hardness. A cover (3) or part of a cover (3), which is applied over the electronic device, is at least partially made from nanomaterial. The cover may be a glob top or an injection-molded cover.

公开(公告)号：EP3958309A1

公开(公告)日：2022-02-23

申请号：EP20192157.4

申请日：2020-08-21

申请人： ams International AG

发明人： Hofrichter, Jens ,  Tobescu, Corneliu-Mihai

IPC分类号： H01L25/075 ,  H01L25/16 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H01L33/58 ,  H01L21/683 ,  H01L23/538

摘要： A display comprises a display substrate (10) with a surface, on which pixels are formed by arranging a plurality of light emitting display subpixels and a plurality of light capturing subpixels on the surface of the display substrate. Each light emitting display subpixel comprises a micro-LED (12) and each light capturing subpixels comprises a micro photodiode (13). The pixels (11) are distributed across an active display area of the display substrate (10). At least a portion of the pixels (11) comprises a light capturing subpixel and at least one light emitting display subpixel.

公开(公告)号：EP3958245A1

公开(公告)日：2022-02-23

申请号：EP20192155.8

申请日：2020-08-21

申请人： ams International AG

发明人： Hofrichter, Jens

IPC分类号： G09G3/32

摘要： A display comprises a display substrate (DS) having an active display area (DA) comprising a plurality of first display subpixels. A transceiver circuit (TC) is arranged to drive the display in a first mode of operation or in a second mode of operation. The first display subpixels comprises micro light-emitting diodes and/or resonant-cavity light emitting devices. In the first mode of operation, the transceiver circuit (TC) provides a forward bias to the first display subpixels, such that the first display subpixels are operable to emit light. In the second mode of operation, the transceiver circuit (TC) provides a reverse bias to the first display subpixels, such that the first display subpixels are operable to detect light.

公开(公告)号：EP3628990A1

公开(公告)日：2020-04-01

申请号：EP18196899.1

申请日：2018-09-26

申请人： ams International AG

发明人： Stojanovic, Goran ,  Steele, Colin ,  Hofrichter, Jens ,  Lazar, Catalin ,  Kraft, Jochen

IPC分类号： G01L9/00 ,  H04R23/00

摘要： An integrated optical transducer (1) for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die (10) having a MEMS diaphragm (11) with a first side (12) exposed to the dynamic pressure changes and a second side (13), and an application-specific integrated circuit, ASIC, die (20) having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element (21) for receiving a source beam (30) from a light source (23) and for splitting the source beam (30) into a probe beam (31) in a first beam path and a reference beam (32) in a second beam path, a beam combining element (22) for combining the probe beam (31) with the reference beam (32) to a superposition beam (33), and a detector (24) configured to generate an electronic interference signal depending on the superposition beam (33). The MEMS die (10) is arranged with respect to the ASIC die (20) such that a gap is formed between the second side (12) of the diaphragm and the ASIC die (20), with the gap defining a cavity (14) and having a gap height. The first beam path of the probe beam (31) comprises coupling into the cavity (14), reflection off of a deflection point or a deflection surface (16) of the diaphragm (11) and coupling out of the cavity (14).

公开(公告)号：EP3958174A1

公开(公告)日：2022-02-23

申请号：EP20192160.8

申请日：2020-08-21

申请人： ams International AG

发明人： Hofrichter, Jens ,  Tobescu, Corneliu-Mihai

IPC分类号： G06K9/20 ,  G06K9/00

摘要： An electronic sensing device (2) comprises a display (1) having a display surface and a plurality of micro light emitters (12) configured to emit light for forming a display image on the display surface. A plurality of micro photodetectors (13) is configured to detect light conditions at the display surface. A transceiver circuit is configured to drive the micro light emitters (12) to emit light, drive the micro photodetectors (13) to detect light and generate photo signals based on the detected light, coordinate the driving of the micro light emitters (12) and of the micro photodetectors (13), and process the photo signals according to at least one of a list of sensing modes. The plurality of micro light emitters (12) and the plurality of micro photodetectors (13) are arranged on a surface of a display substrate.

公开(公告)号：EP3331034A1

公开(公告)日：2018-06-06

申请号：EP16202201.6

申请日：2016-12-05

申请人： ams International AG

发明人： Meinhardt, Gerald ,  Wachmann, Ewald ,  Sagmeister, Martin ,  Hofrichter, Jens

IPC分类号： H01L31/115 ,  H01L31/103 ,  H01L31/0352 ,  H01L31/0224 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L31/115 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14663 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： A CMOS compatible photodiode device comprises a substrate (1) of semiconductor material with a main surface (10) and a plurality of doped wells (3) of a first type of conductivity constituting one pixel of an array of pixels for image detection. The doped wells (3) are spaced apart at the main surface (10). The device further has a guard ring (7) comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring (7) surrounds an area of the main surface (10) including the plurality of doped wells (3) without dividing this area. Conductor tracks (4) are electrically connected with the doped wells (3), which are thus interconnected, and further conductor tracks (5) are electrically connected with a region of the second type of conductivity. A doped surface region (2) of the second type of conductivity is present at the main surface (10) and covers the entire area between the guard ring (7) and the doped wells (3). The photodiode of the pixel is radiation-hard, has high speed, low capacitance, low leakage current and a low temperature coefficient of the responsivity.