公开(公告)号：EP2190116A1

公开(公告)日：2010-05-26

申请号：EP08783933.8

申请日：2008-08-11

申请人： Yan, Yuejun ,  Yan, Yuepeng

发明人： Yan, Yuejun ,  Yan, Yuepeng

IPC分类号： H03H7/24

CPC分类号： H01C13/02 ,  H01C1/16 ,  H03H7/24

摘要： A variable attenuator is provided, which includes at least one step attenuator circuit. The attenuator circuit includes at least a signal input end, a signal output end, a conjunct grounding end. The first cascade resistor is connected between the signal input end and the signal output end, and a main signal circuit is formed. The first parallel resistor is connected between a point of the main signal circuit and the conjunct grounding end. The attenuator further includes: the first parallel switch connected with the first cascade resistor; the first cascade switch connected with the first parallel resistor. The parallel switch is connected in parallel to the two ends of the cascade resistor in the variable attenuator, and the cascade switch is connected in series to the two ends of the parallel resistor. At the same time when the parallel switch is controlled to turn on to disable the certain step attenuation, the cascade switch is controlled to turn off to eliminate the influence to the main signal circuit by the parallel resistor.

公开(公告)号：EP1777812A4

公开(公告)日：2007-08-29

申请号：EP05745432

申请日：2005-04-18

申请人： YAN YUEJUN

发明人： YAN YUEJUN

IPC分类号： H03F1/30 ,  H03B1/04 ,  H03F3/16

CPC分类号： H03F3/16 ,  H03F1/301 ,  H03F2200/18

摘要： The invention discloses a FET (Field Effect Transistor) bias circuit, including current changing information circuit that has a power source resistance connected with the signal output end of this circuit, the other end of the resistance is connected with a reference voltage source, and the node between the resistance and the current changing information circuit acts as the output end providing the voltage changing information; and a voltage divider circuit connected with at least one voltage source, the voltage divider circuit is connected with the output end providing the voltage changing information; the current in a signal action FET is controlled by providing the voltage changing information at the output end to the voltage divider circuit and getting a dividing voltage from the voltage divider circuit to be a output end of the FET bias circuit. The bias circuit of the invention can make the static drain current of the signal action FET to remain constant, and reduce the deviation of the static drain current of the signal action FET of each chip in the whole wafer and its cost is low, its area is small, and it is easy to be integrated and fabricated.

公开(公告)号：EP1804329A1

公开(公告)日：2007-07-04

申请号：EP05755038.6

申请日：2005-06-17

申请人： Yan, Yuejun ,  YAN, Yuepeng

发明人： Yan, Yuejun ,  YAN, Yuepeng

IPC分类号： H01P1/22

CPC分类号： H01P1/227

摘要： The invention discloses a variable attenuator, comprising: a base, a first film resistor located on the base, an input terminal and an output terminal connected to the two ends of the first film resistor; the two ends of the first film resistor are further electrically connected to one end of a third film resistor and one end of a fourth film resistor; the other ends of the third film resistor and fourth film resistor are further electrically connected to one end of a second film resistor, the other end of the second film resistor is electrically connected to a ground terminal; the variable attenuator of the invention further comprises a first conductive sheet and a second conductive sheet that can be electrically contacted by the first film resistor and the second film resistor respectively and are used to change the resistance values of the first film resistor and second film resistor, respectively; the variable attenuator of the invention further comprises an insulator, wherein the first conductive sheet and the second conductive sheet are fixed thereon. The variable attenuator of the invention is suitable for use in various high frequency and microwave circuits and systems, and has the features of a wide frequency band, small size, easy fabrication, low cost, and so on.

摘要翻译： 本发明公开了一种可变衰减器，包括：基座，位于基座上的第一薄膜电阻，输入端和与第一薄膜电阻两端连接的输出端; 第一薄膜电阻的两端还与第三薄膜电阻的一端和第四薄膜电阻的一端电连接， 第三薄膜电阻和第四薄膜电阻的另一端进一步电连接到第二薄膜电阻的一端，第二薄膜电阻的另一端电连接到接地端; 本发明的可变衰减器还包括第一导电片和第二导电片，所述第一导电片和第二导电片能够分别与第一薄膜电阻器和第二薄膜电阻器电接触，并且用于改变第一薄膜电阻器和第二薄膜电阻器的电阻值 ， 分别; 本发明的可变衰减器还包括绝缘体，其中第一导电片和第二导电片固定在绝缘体上。 本发明的可变衰减器适用于各种高频微波电路和系统，具有频带宽，体积小，制作容易，成本低等特点。

公开(公告)号：EP1804329A4

公开(公告)日：2007-10-10

申请号：EP05755038

申请日：2005-06-17

申请人： YAN YUEJUN ,  YAN YUEPENG

发明人： YAN YUEJUN ,  YAN YUEPENG

IPC分类号： H01P1/22

CPC分类号： H01P1/227

摘要： The present invention relates to a variable attenuator. The attenuator comprises: a substrate on which a first film resistor is located, both ends of the first film resistor are electrically connected to an input port and an output port respectively, both ends of the first film resistor are also electrically connected to one end of a third film resistor and one end of a fortieth film resistor respectively, the other end of the third film resistor and the other end of the fortieth film resistor are electrically connected to the same end of a second film resistor, and the other end of the second film resistor is coupled to the ground; a first conductive sheet and a second conductive sheet which are respectively electrically connected to the first film resistor and the second film resistor to change the resistance of the first film resistor and the resistance of the second film resistor respectively; and an insulator on which the first conductive sheet and the second conductive sheet are fixed. The present invention is adaptive to apply in high frequency and microwave circuits and systems, and has the advantages in wide band, small size, fabricating easily and low cost.

公开(公告)号：EP1750369A4

公开(公告)日：2007-09-19

申请号：EP05752224

申请日：2005-04-28

申请人： YAN YUEJUN ,  YAN YUEPENG

发明人： YAN YUEJUN ,  YAN YUEPENG

IPC分类号： H03H7/24 ,  H03F1/30 ,  H03H7/25

CPC分类号： H03F1/30 ,  H03F2200/447 ,  H03H7/251

摘要： The present invention discloses a temperature compensation attenuator, comprising: a base (6), a thin film thermistor (1) on the base (6), an input terminal (3) and an output terminal (4) which are connected to the two ends of the thin film thermistor (1) respectively, and a thermistor (2), the top side of the thermistor (2) is electronically connected to the bottom side of the thermistor (1), the bottom side of the thermistor (2) is electronically connected to the ground. By connecting the temperature compensation attenuator of the present invention to the high frequency and microwave active circuit, it can compensate variance of the gain of the high frequency and microwave active device or the drift of the frequency characteristic of the active device due to the temperature variance. The temperature compensation attenuator of the present invention can be used in various of high frequency and microwave circuits and systems in particular, suitable for mobile communication systems, satellite communication systems and radar systems which require a strict temperature characteristic.

公开(公告)号：EP1777812A1

公开(公告)日：2007-04-25

申请号：EP05745432.4

申请日：2005-04-18

申请人： Yan, Yuejun

发明人： Yan, Yuejun

IPC分类号： H03F1/30 ,  H03B1/04

CPC分类号： H03F3/16 ,  H03F1/301 ,  H03F2200/18

摘要： The present invention discloses an FET (Field Effect Transistor) bias circuit comprising a current-changing information circuit having a power source, a resistor connected to the signal output end of this circuit, the other end of the resistor connected to a reference voltage source, and the node between the resistor and the current-changing information circuit acting as the output end providing voltage-changing information; and a voltage divider circuit connected to at least one voltage source, and connected to the output end providing the voltage-changing information; the current in a signal FET is controlled by providing the voltage-changing information at the output end to the voltage divider circuit, and getting a dividing voltage from the voltage divider circuit as an output end of the FET bias circuit. The bias circuit of the present invention causes the static drain current of the signal FET to remain constant, and reduces the variation of the static drain current of the signal FET of each chip made from an entire wafer. Its cost is low, its size is small, and it is easy to be integrated and fabricated.

摘要翻译： 本发明公开了一种FET（场效应晶体管）偏置电路，其包括具有电源的电流变化信息电路，连接到该电路的信号输出端的电阻，连接到参考电压源的电阻器的另一端， 以及所述电阻器和作为提供电压变化信息的输出端的所述电流变化信息电路之间的节点; 以及分压器电路，连接到至少一个电压源并连接到提供电压变化信息的输出端; 信号FET中的电流通过在输出端向分压器电路提供电压变化信息并从作为FET偏置电路的输出端的分压器电路获得分压来控制。 本发明的偏置电路使得信号FET的静态漏极电流保持恒定，并且减小了由整个晶片制成的每个芯片的信号FET的静态漏极电流的变化。 它的成本低，尺寸小，易于集成和制造。

公开(公告)号：EP1777812B1

公开(公告)日：2012-11-21

申请号：EP05745432.4

申请日：2005-04-18

申请人： Yan, Yuejun

发明人： Yan, Yuejun

IPC分类号： H03F1/30 ,  H03B1/04 ,  H03F3/16

CPC分类号： H03F3/16 ,  H03F1/301 ,  H03F2200/18

公开(公告)号：EP1750369B1

公开(公告)日：2009-06-10

申请号：EP05752224.5

申请日：2005-04-28

申请人： Yan, Yuejun ,  YAN, Yuepeng

发明人： Yan, Yuejun ,  YAN, Yuepeng

IPC分类号： H03H7/24 ,  H03F1/30

CPC分类号： H03F1/30 ,  H03F2200/447 ,  H03H7/251

摘要： The present invention discloses a temperature compensation attenuator, comprising: a base (6), a thin film thermistor (1) on the base (6), an input terminal (3) and an output terminal (4) which are connected to the two ends of the thin film thermistor (1) respectively, and a thermistor (2), the top side of the thermistor (2) is electronically connected to the bottom side of the thermistor (1), the bottom side of the thermistor (2) is electronically connected to the ground. By connecting the temperature compensation attenuator of the present invention to the high frequency and microwave active circuit, it can compensate variance of the gain of the high frequency and microwave active device or the drift of the frequency characteristic of the active device due to the temperature variance. The temperature compensation attenuator of the present invention can be used in various of high frequency and microwave circuits and systems in particular, suitable for mobile communication systems, satellite communication systems and radar systems which require a strict temperature characteristic.

公开(公告)号：EP1750369A1

公开(公告)日：2007-02-07

申请号：EP05752224.5

申请日：2005-04-28

申请人： Yan, Yuejun ,  YAN, Yuepeng

发明人： Yan, Yuejun ,  YAN, Yuepeng

IPC分类号： H03H7/24 ,  H03F1/30

CPC分类号： H03F1/30 ,  H03F2200/447 ,  H03H7/251

摘要： This specification discloses a temperature compensation attenuator comprising a base (6), a film thermistor (1) disposed on the base (6), an input terminal (3) and an output terminal (4) which are connected to the two ends of the film thermistor (1), respectively, and a film resistor (2), wherein the top side of the film resistor (2) is electronically or electrically connected to the bottom side of the thermistor (1), and the bottom side of the film resistor (2) is electronically or electrically connected to the ground. By connecting the temperature compensation attenuator of the present invention to a high frequency or microwave active circuit, it can compensate for the variance in the gain of the high frequency or microwave active device or the drift of the frequency characteristic of the active device due to temperature variance. The temperature compensation attenuator of the present invention can be used in various circuits and systems utilizing high frequency waves or microwaves, in particular, it is suitable for mobile communication systems, satellite communication systems, and radar systems which require strict temperature characteristics.

摘要翻译： 本说明书公开了一种温度补偿衰减器，包括基座（6），设置在基座（6）上的薄膜热敏电阻（1），输入端子（3）和输出端子（4） 薄膜电阻器（1）和薄膜电阻器（2），其中薄膜电阻器（2）的顶侧电连接或电连接到热敏电阻（1）的底侧，薄膜的底侧 电阻（2）电连接或电连接到地面。 通过将本发明的温度补偿衰减器连接到高频或微波有源电路，可以补偿高频或微波有源器件的增益的变化或由于温度导致的有源器件的频率特性的漂移 方差。 本发明的温度补偿衰减器可以用在利用高频波或微波的各种电路和系统中，特别适用于要求严格的温度特性的移动通信系统，卫星通信系统和雷达系统。