摘要:
The generation of terahertz electromagnetic radiation, using a laser which is incident upon an electrically biased photoconductor and an antenna. The device has a layered structure comprising a semiconductor substrate below a wetting layer (55) epitaxially grown on the substrate, barrier layers (57) are positioned above and below a quantum dot layer (59). A contact layer (60) is provided with a contact (61) which couples the quantum dot structure to a voltage source (63). The reduction of the carrier lifetime in a conducting state, allied to its high carrier mobility that is possibly comparable to that of bulk GaAs can provide fast photoconductive devices and produce sources of terahertz radiation.
摘要:
A downconversion film element comprises quantum dots and phosphor, wherein either (a) the quantum dots emit a peak red wavelength in a range from 615 to 660 nm and a FWHM of less than 50 nm, and the phosphor emits a peak green wavelength in a range from 515 to 555 nm and a FWHM of less than 80 nm and has an internal fluorescence quantum yield of 75% or greater or (b) the quantum dots emit a peak green wavelength in a range from 515 to 555 nm and a FWHM of less than 40 nm, and the phosphor emits a peak red wavelength in a range from 615 to 645 nm and a FWHM of less than 80 nm and has an internal fluorescence quantum yield of 75% or greater.
摘要:
A liquid crystal display device and a method of manufacturing it are provided. The display device includes a blue light backlight source (1) and a liquid crystal display panel (2), wherein the liquid crystal display panel comprises a first substrate (22) and a second substrate (21). The first substrate or the second substrate includes a layered assembly, functioning as a colour filter and including a black matrix pattern (201), a red pixel pattern (202) and a green pixel pattern (203), wherein the red pixel pattern and the green pixel pattern are quantum dot material thin-film patterns respectively emitting red light and green light upon excitation by blue light. The red pixel pattern (202) is separated from the black matrix pattern (201) by an intervening first passivation layer (241); furthermore, the red and green pixel patterns are mutually separated by an intervening second passivation layer (242), and the green pixel pattern (203) is covered by a protection layer (243).
摘要:
A liquid crystal display device and a method of manufacturing it are provided. The display device includes a blue light backlight source (1) and a liquid crystal display panel (2), wherein the liquid crystal display panel comprises a first substrate (22) and a second substrate (21). The first substrate or the second substrate includes a layered assembly, functioning as a colour filter and including a black matrix pattern (201), a red pixel pattern (202) and a green pixel pattern (203), wherein the red pixel pattern and the green pixel pattern are quantum dot material thin-film patterns respectively emitting red light and green light upon excitation by blue light. The red pixel pattern (202) is separated from the black matrix pattern (201) by an intervening first passivation layer (241); furthermore, the red and green pixel patterns are mutually separated by an intervening second passivation layer (242), and the green pixel pattern (203) is covered by a protection layer (243).
摘要:
In an organic/inorganic composite superlattice type optical modulator capable of entering/projecting light, and capable of modulating an optical characteristic such as transmittance, reflectivity, and a refractive index of light in response to an externally controlled electric field, or light, the organic/inorganic composite superlattice type optical modulator includes at least one sort of a compound semiconductor layer (1) and at least one sort of an organic compound layer (2); the compound semiconductor layer (1) and the organic compound layer (2) are alternately stacked in at least one period; at least one of the compound semiconductor layer (1) and the organic compound layer (2) owns crystalline; and also a thickness of each of the layers is made larger than a Bohr radius of the compound semiconductor, and 10 times smaller than it. As a result, this novel optical modulator can provide a high nonlinear characteristic by a semiconductor modulator, and a high response characteristic by an organic modulator.
摘要:
To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type semi-insulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitance- loaded electrode is provided on the n-type clad layer.
摘要:
In an organic/inorganic composite superlattice type optical modulator capable of entering/projecting light, and capable of modulating an optical characteristic such as transmittance, reflectivity, and a refractive index of light in response to an externally controlled electric field, or light, the organic/inorganic composite superlattice type optical modulator includes at least one sort of a compound semiconductor layer (1) and at least one sort of an organic compound layer (2); the compound semiconductor layer (1) and the organic compound layer (2) are alternately stacked in at least one period; at least one of the compound semiconductor layer (1) and the organic compound layer (2) owns crystalline; and also a thickness of each of the layers is made larger than a Bohr radius of the compound semiconductor, and 10 times smaller than it. As a result, this novel optical modulator can provide a high nonlinear characteristic by a semiconductor modulator, and a high response characteristic by an organic modulator.