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    LIGHT CONVERSION MEMBER AND DISPLAY DEVICE HAVING THE SAME
    3.
    发明公开
    LIGHT CONVERSION MEMBER AND DISPLAY DEVICE HAVING THE SAME 审中-公开
    光转换元件和显示设备

    公开(公告)号：EP2689289A2

    公开(公告)日：2014-01-29

    申请号：EP12760810.7

    申请日：2012-03-21

    申请人： LG Innotek Co., Ltd.

    发明人： PARK, Seung Ryong

    IPC分类号： G02F1/13357 ,  G02F1/1333

    CPC分类号： G02F1/353 ,  G02B6/0023 ,  G02B6/009 ,  G02F1/1336 ,  G02F1/133615 ,  G02F2001/01791 ,  G02F2001/133614 ,  H01L33/507

    摘要： Disclosed are a light conversion member and a display device having the same. The display device includes a light source, and a light conversion member adjacent to the light source. The light conversion member includes a plurality of light conversion particles to convert a wavelength of a light emitted from the light source, and a sealing member to receive the light conversion particles. The sealing member includes an incident part facing an exit surface of the light source, an exit part facing the incident part while the light conversion particles are interposed between the exit part and the incident part, and a reflection part connected to the incident part and the exit part.

    Wavelength conversion device using nonlinear medium having quantum dots
    4.
    发明公开
    Wavelength conversion device using nonlinear medium having quantum dots 有权
    Wellenlängenumwandlungsvorrichtungmit einem nichtlinearen Medium mit Quantenpunkten

    公开(公告)号：EP2568328A2

    公开(公告)日：2013-03-13

    申请号：EP12195862.3

    申请日：2003-09-10

    申请人： FUJITSU LIMITED

    发明人： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC分类号： G02F1/35

    CPC分类号： B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    摘要： A wavelength conversion device including a nonlinear medium (20) having quantum dots (24) uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. The nonlinear medium (20) is disposed on an n type GaAs [100] orientation substrate (21) and includes an n type AlGaAs clad layer (22) formed on the substrate (21) and a lower part SCH layer (23) including non-doped GaAs formed on the clad layer (22). An island-like area of non-doped InAs or InGaAs, which is formed by S-K mode growth is formed on the SCH layer (23) as quantum dots (24) and a non-doped GaAs barrier layer (25) is formed on the SCH layer (23) in a manner covering the quantum dots (24). An upper part SCH layer (27) including non-doped GaAs is formed on the acive layer (26) and a p type AlGaAs clad layer (28) is formed on the upper part SCH layer (27). An upper part electrode (29) is formed on the clad layer (28) and a lower part electrode (30) is formed on a bottom surface of the substrate (21).

    摘要翻译： 包括具有量子点（24）的非线性介质（20）的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且对于具有光学四波混频的宽带宽信号光进行波长转换。 非线性介质（20）设置在n型GaAs [100]取向基板（21）上，并且包括形成在基板（21）上的n型AlGaAs覆盖层（22）和包括非线性介质（20）的下部SCH层 形成在包层（22）上的掺杂的GaAs。 在SCH层（23）上作为量子点（24）形成由SK模式生长形成的非掺杂InAs或InGaAs的岛状区域，并且在其上形成非掺杂GaAs势垒层（25） SCH层（23）以覆盖量子点（24）的方式。 在吸附层（26）上形成包含非掺杂GaAs的上部SCH层（27），在上层SCH层（27）上形成p型AlGaAs覆盖层（28）。 在包层（28）上形成上部电极（29），在基板（21）的底面上形成下部电极（30）。

    METHOD AND DEVICE FOR POLARIZATION CONVERSION USING QUANTUM DOTS
    5.
    发明公开
    METHOD AND DEVICE FOR POLARIZATION CONVERSION USING QUANTUM DOTS 审中-公开
    方法和装置极化实现的使用量子点

    公开(公告)号：EP1910890A1

    公开(公告)日：2008-04-16

    申请号：EP06761258.0

    申请日：2006-08-04

    申请人： ETeCH AG

    发明人： MOLENKAMP, Laurens, W. ,  ASTAKHOV, Georgy ,  OSSAU, Wolfgang ,  KRESSLING, Tobias ,  PLATONOV, Alexei

    IPC分类号： G02F1/01 ,  G02B5/30 ,  G02F1/017

    CPC分类号： G02F1/0136 ,  B82Y10/00 ,  G02F2001/01791 ,  G06N99/002

    摘要： A novel and efficient method for polarization conversion, particularly from linear polarization to circular polarization, and, importantly, vice versa, is obtained using shapeanisotropic self-assembled quantum dots, which, having the advantage of extremely small size (nanometer scale), may be readily incorporated into photonic crystals and/or other optical components. Such devices also have the advantage of working in the absence of an applied magnetic field. Such devices also, when a voltage bias is applied, can be used to manipulate electron spin by manipulating light polarization in the same circuit, and vice versa. This permits a high degree of control for either or both of these in spintronics and/or optical devices, the biased quantum dot being used as a nanometer scale electro-optic modulator. Components utilizing the method and/or devices may be used as part of highly compact optical computing networks and/or spintronics systems for e.g., information processing, quantum computation, holography, and data recording.

    Semiconductor optical device having a non-linear operational characteristic
    6.
    发明公开
    Semiconductor optical device having a non-linear operational characteristic 失效
    Optische Halbleitervorrichtung mit nichtlinearer Betriebscharakteristik

    公开(公告)号：EP0686866A1

    公开(公告)日：1995-12-13

    申请号：EP95111439.6

    申请日：1989-09-08

    申请人： FUJITSU LIMITED

    发明人： Takeuchi,Atsushi ,  Muto, Shunichi

    IPC分类号： G02F1/015 ,  G02F1/35

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/01716 ,  G02F1/218 ,  G02F2001/01783 ,  G02F2001/01791

    摘要： A semiconductor optical device having a refractive index changed in response to irradiation of an incident optical beam, comprising a first material layer (M1) having a first band gap (Eg1) and a first thickness (l₁), a second material layer (M2) having a second band gap (Eg2) substantially larger than the first band gap and disposed at both sides of the first material layer, the second material layer having a second thickness (I₂) for allowing tunneling of electrons therethrough, and a third material layer (M3) having a third band gap (Eg3) substantially smaller than the second band gap and provided at least on one side of the second material layer, the third material layer (M3) having a third thickness (I₃). The first thickness (I₁) is chosen such that there is formed a quantum well structure in the first material layer (M1) wherein electrons and holes assume discrete quantum levels (L1, L1') respectively at a conduction band and a valence band in the first material layer, the third thickness (I₃) is chosen such that there is formed a quantum well structure in the third material layer (M3) wherein electrons and holes assume other discrete quantum levels (L3, L3') respectively at the conduction band and the valence band in the third material layer and such that there exists at least one quantum level of electrons (L3) in the third material layer (M3) of which energy is substantially lower than that of the quantum level (L1) of electrons interacting with the incident optical beam in the first material layer (M1). Furthermore, the first and second material layers have respective thicknesses and compositions chosen such that there exists an energy difference (E H ) between the quantum level of the holes (L1') in the first material layer (M1) and a top edge of the valence band (E V ) of the second material layer (M2) which is substantially reduced as compared to that (E E ) between a bottom edge of the conduction band (E C ) of the second material layer (M2) and the quantum level (L1) of the electrons interacting with the incident optical beam in the first material layer (M1), so that tunneling of electrons from the first material layer to the third material layer through the second material layer is facilitated.

    摘要翻译： 具有响应于入射光束的照射而变化的折射率的半导体光学器件，包括具有第一带隙（Eg1）和第一厚度（l1）的第一材料层（M1），第二材料层（M2） 具有大于所述第一带隙的第二带隙（Eg2），并且设置在所述第一材料层的两侧，所述第二材料层具有允许电子穿过其的第二厚度（I2），以及第三材料层 M3）具有基本上小于第二带隙的第三带隙（Eg3），并且设置在第二材料层的至少一侧上，第三材料层（M3）具有第三厚度（I3）。 选择第一厚度（I1）使得在第一材料层（M1）中形成量子阱结构，其中电子和空穴分别在导带和价带中分别带有离子量级（L1，L1'）和价带 选择第三厚度（I3），使得在第三材料层（M3）中形成量子阱结构，其中电子和空穴分别在导带处呈现其它离散量子电平（L3，L3'）， 在第三材料层中的价带并且使得在第三材料层（M3）中存在至少一个量子级的电子（L3），其能量基本上低于与 入射光束在第一材料层（M1）中。 此外，第一和第二材料层具有各自的厚度和组成，使得在第一材料层（M1）中的孔（L1'）的量子水平与化合价的顶边之间存在能量差（EH） 与第二材料层（M2）的导带（EC）的底部边缘和第二材料层（M2）的导带（EC）的底部边缘与第二材料层（M2）的导带（EC）的底部边缘和量子能级（L1）之间的（EE））相比基本上减小的第二材料层（M2） 电子与第一材料层（M1）中的入射光束相互作用，使得电子从第一材料层到第三材料层穿过第二材料层的隧道化变得容易。

    Optical bandpass filter having a variable passband wavelength
    7.
    发明公开
    Optical bandpass filter having a variable passband wavelength 失效
    具有可变波段波长的光学滤波器

    公开(公告)号：EP0505288A3

    公开(公告)日：1993-01-13

    申请号：EP92400767.7

    申请日：1992-03-20

    申请人： FUJITSU LIMITED

    发明人： Tanaka, Kazuhiro, c/o FUJITSU LIMITED

    IPC分类号： G02F1/025 ,  G02F1/25

    CPC分类号： B82Y20/00 ,  G02F1/0126 ,  G02F1/01708 ,  G02F1/01716 ,  G02F2001/0155 ,  G02F2001/01791 ,  G02F2203/055

    摘要： An optical bandpass filter comprises a waveguide region (1) for guiding an optical beam from an input end to an output end, a clad structure (11, 12, 15, 16) provided above and below the waveguide region for confining the optical beam therein, a plurality of quantum well boxes (20) formed in the waveguide region with respectively different quantum levels for selectively absorbing an optical component in the incident optical beam that causes a resonance with the quantum level of the quantum well box, a barrier region (21) provided in the waveguide region for surrounding each of the plurality of quantum well boxes with respect to all of three-dimensional directions and comprising a material having a second band gap that is substantially larger than said first band gap, and window means (3) provided on the clad structure for directing a control optical beam such that the control optical beam irradiates the plurality of quantum well boxes.

    Optical bandpass filter having a variable passband wavelength
    8.
    发明公开
    Optical bandpass filter having a variable passband wavelength 失效
    Optischer Bandpassfilter mit VariablerBandpasswellenlänge。

    公开(公告)号：EP0505288A2

    公开(公告)日：1992-09-23

    申请号：EP92400767.7

    申请日：1992-03-20

    申请人： FUJITSU LIMITED

    发明人： Tanaka, Kazuhiro, c/o FUJITSU LIMITED

    IPC分类号： G02F1/025 ,  G02F1/25

    CPC分类号： B82Y20/00 ,  G02F1/0126 ,  G02F1/01708 ,  G02F1/01716 ,  G02F2001/0155 ,  G02F2001/01791 ,  G02F2203/055

    摘要： An optical bandpass filter comprises a waveguide region (1) for guiding an optical beam from an input end to an output end, a clad structure (11, 12, 15, 16) provided above and below the waveguide region for confining the optical beam therein, a plurality of quantum well boxes (20) formed in the waveguide region with respectively different quantum levels for selectively absorbing an optical component in the incident optical beam that causes a resonance with the quantum level of the quantum well box, a barrier region (21) provided in the waveguide region for surrounding each of the plurality of quantum well boxes with respect to all of three-dimensional directions and comprising a material having a second band gap that is substantially larger than said first band gap, and window means (3) provided on the clad structure for directing a control optical beam such that the control optical beam irradiates the plurality of quantum well boxes.

    摘要翻译： 光学带通滤波器包括用于将光束从输入端引导到输出端的波导区域（1），设置在波导区域上方和下方的用于限制光束的包层结构（11,12,15,16） 形成在所述波导区域中的多个量子阱盒（20），其分别具有不同的量子级，用于选择性地吸收入射光束中的与所述量子阱盒的量子水平共振的光学部件;阻挡区域（21 ）设置在所述波导区域中，用于相对于所有三维方向围绕所述多个量子阱盒中的每一个，并且包括具有基本上大于所述第一带隙的第二带隙的材料，以及窗口装置（3） 设置在用于引导控制光束的包层结构上，使得控制光束照射多个量子阱盒。