摘要:
The present invention includes a memory subsystem comprising at least two semiconductor devices (15, 16, 17), including at least one memory device (15, 16 or 17), connected to a bus (18), where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices (15, 16 or 17), where the control information includes device-select information and the bus (18) has substantially fewer bus lines than the number of bits in a single address, and the bus (18) carries device-select information without the need for separated device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus (18) and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices (15, 16, 17). The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an Address Valid bus line carry address, data and control information for memory addresses up to 40 bits wide.
摘要:
The present invention concerns a dynamic random access memory (DRAM) semiconductor device having at least one memory array which includes a plurality of memory cells arranged in rows and columns. The DRAM contains connection means adapted to connect the DRAM to an external bus which is a part of a semiconductor bus architecture. The semiconductor bus architecture includes a plurality of semiconductor devices connected in parallel to the external bus. The external bus includes a plurality of bus lines for carrying substantially all address, data, and control information needed by the DRAM for communication with substantially every other semiconductor device connected to the external bus. The connection means is adapted to receive multiplexed addresses. The DRAM contains clock receiver circuitry for receiving an external clock signal. It further contains a programmable access-time register for storing a value which is representative of a first number of clock cycles of the external clock signal to transpire after which the DRAM responds to a write request received synchronously with respect to the external clock signal. The programmable access-time register is accessible to the external bus through the connection means. In order to set the value in the programmable access-time register, data is transmitted to the programmable access-time register over the external bus. The DRAM contains further a plurality of input receivers to receive write data from the external bus in response to the write request. The input receivers input the write data from the external bus after the first number of clock cycles transpire so that the write request and the corresponding receipt of write data are separated by the first number of clock cycles as selected by the value stored in the programmable access-time register.
摘要:
The present invention concerns a dynamic random access memory (DRAM) semiconductor device having at least one memory array which includes a plurality of memory cells arranged in rows and columns. The DRAM contains connection means adapted to connect the DRAM to an external bus which is a part of a semiconductor bus architecture. The semiconductor bus architecture includes a plurality of semiconductor devices connected in parallel to the external bus. The external bus includes a plurality of bus lines for carrying substantially all address, data, and control information needed by the DRAM for communication with substantially every other semiconductor device connected to the external bus. The connection means is adapted to receive multiplexed addresses. The DRAM contains clock receiver circuitry for receiving an external clock signal. It further contains a programmable access-time register for storing a value which is representative of a first number of clock cycles of the external clock signal to transpire after which the DRAM responds to a write request received synchronously with respect to the external clock signal. The programmable access-time register is accessible to the external bus through the connection means. In order to set the value in the programmable access-time register, data is transmitted to the programmable access-time register over the external bus. The DRAM contains further a plurality of input receivers to receive write data from the external bus in response to the write request. The input receivers input the write data from the external bus after the first number of clock cycles transpire so that the write request and the corresponding receipt of write data are separated by the first number of clock cycles as selected by the value stored in the programmable access-time register.
摘要:
The present invention includes a memory subsystem comprising at least two semiconductor devices (15, 16, 17), including at least one memory device (15, 16 or 17), connected to a bus (18), where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices (15, 16 or 17), where the control information includes device-select information and the bus (18) has substantially fewer bus lines than the number of bits in a single address, and the bus (18) carries device-select information without the need for separated device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus (18) and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices (15, 16, 17). The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an Address Valid bus line carry address, data and control information for memory addresses up to 40 bits wide.
摘要:
A parallel packetized intermodule arbitrated high speed control data bus system which allows high speed communications between microprocessor modules in a more complex digital processing environment. The system features a simplified hardware architecture featuring fast FIFO queuing operating at 12.5 MHz, TTL CMOS compatible level clocking signals, single bus master arbitration, synchronous clocking, DMA, and unique module addressing for multiprocessor systems. The system includes a parallel data bus with sharing bus masters residing on each processing module decreeing the commzunication and data transfer protocols. Bus arbitration is performed over a dedicated serial arbitration line and each requesting module competes for access to the parallel data bus by placing the address of the receiving module on the arbitration line and monitoring the arbitration line for collisions.
摘要:
The present invention includes a memory subsystem comprising at least two semiconductor devices (15, 16, 17), including at least one memory device (15, 16 or 17), connected to a bus (18), where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices (15, 16 or 17), where the control information includes device-select information and the bus (18) has substantially fewer bus lines than the number of bits in a single address, and the bus (18) carries device-select information without the need for separated device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus (18) and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices (15, 16, 17). The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an Address Valid bus line carry address, data and control information for memory addresses up to 40 bits wide.
摘要:
The present invention includes a memory subsystem comprising at least two semiconductor devices (15, 16, 17), including at least one memory device (15, 16 or 17), connected to a bus (18), where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices (15, 16 or 17), where the control information includes device-select information and the bus (18) has substantially fewer bus lines than the number of bits in a single address, and the bus (18) carries device-select information without the need for separated device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus (18) and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices (15, 16, 17). The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an Address Valid bus line carry address, data and control information for memory addresses up to 40 bits wide.
摘要:
In order to control access of several systems (S₁₀, S₁₁, ...; S₂₀, S₂₁, ...; S₃₀, S₃₁, ...) each operating according to its own specific mode, such as protocol, speed of transmission etc. to a common bus (B) there is provided a time division of access to the bus between the various systems. At the end of its transmission cycle the system which controls the bus (B) at the time generates an event constituting a synchronisation base for all the devices present on line. These then contribute to the formation of a successive conflict byte which leads to the identification of the system destined to gain control of the bus (B).