摘要:
Ein magneto-optisches Speichermedium zum mehrfachen Schreiben von Informationen bei einer Schreibtemperatur T w oder zwei Schreibtemperaturen T h , T l oberhalb der Raumtemperatur T a und zum mehrfachen Lesen bei einer Temperatur T m mit einer Frontmaskierung bei der Temperatur T f und einer Rückmaskierung bei einer Temperatur T r oberhalb der Raumtemperatur T a in einem externen Magnetfeld H e , das ein Substrat, eine auf dem Substrat angeordneten ersten magnetischen Schicht mit einer temperaturabhängigen Koerzitivfeldstärke H C1 (T), der Kompensationstemperatur T cp1 und der Curie-Temperatur T C1 , eine auf der ersten magnetischen Schicht angeordneten zweiten magnetischen Schicht, einer temperaturabhängigen Koerzitivfeldstärke H C2 (T), der Kompensationstemperatur T cp2 und der Curie-Temperatur T C2 , und eine auf der zweiten magnetischen Schicht angeordneten dritten magnetischen Schicht, mit einer temperaturabhängigen Koerzitivfeldstärke H C3 (T), der Kompensationstemperatur T cp3 und der Curie-Temperatur T C3 umfaßt, wobei gilt:Ta He für T
摘要:
A magneto-optical recording medium (11) has a second auxiliary magnetic film (4), a first auxiliary magnetic film (5) and a magneto-optical recording film (6) in this order from the laser beam applied side. If the temperatures of the first and second auxiliary magnetic films (4 and 5) exceed their critical temperatures T CR1 and T CR2 , the magnetization of the auxiliary magnetic films is changed from the surface magnetization to the vertical magnetization. The Curie points T C0 , T C1 and T C2 of the magneto-optical recording film (6), the first auxiliary magnetic film (4) and the second auxiliary magnetic film (5) and the critical temperatures T CR1 and T CR2 satisfy the relations room temperature CR2 CR1 C0 , T C1 and T C2 . The thickness of the first auxiliary magnetic film (4) is larger than the tickness of a magnetic wall. After the recording magnetic domain (22) of the magneto-optical recording film (6) is contracted and transferred onto the first auxiliary magnetic film (4) by the reproducing light application, it is expanded and transferred onto the second auxiliary magnetic film (5). Since an amplified reproducing signal can be obtained from an expanded magnetic domain (23), the magneto-optical recording medium is suitable for the reproduction of the high density recording.
摘要:
The present invention relates to a thermomagnetic recording method using a thermomagnetic recording medium formed in a laminated structure of, at least, first and second magnetic thin films (11, 12, 13) each having perpendicular magnetic anisotropy, wherein said second magnetic thin film (12) is formed of first and second component films (12 1 , 12 2 ) laminated to each other by exchange coupling, said first and second component films (12 1 , 12 2 ) having characteristics H C21R > H C22R and T C21 C22 , H C21R and H C22R representing coercive forces of said first and second component films (12 1 , 12 2 ) at room temperature and T C21 and T C22 representing the Curie temperatures of the same. This method comprises the steps of: modulating a first heating condition to heat the medium to a first temperature T 1 being virtually in the vicinity of the Curie temperature T C1 of said first magnetic thin film (11) and not causing reversal of the magnetic moment in said second magnetic thin film (12) and a second heating condition to heat the medium to a second temperature T 2 being over said Curie temperature T C1 and sufficient to cause reversal of the magnetic moment in said second magnetic thin film (12) in accordance with an information signal to be recorded, and adapting in the course of the medium cooling down from the first and second heated states such that the magnetic moments within said second magnetic thin film (12) are brought into the same state.
摘要:
A magnetooptical recording medium includes a memory layer (1113) having an out of plane preferred direction of magnetization and an initializing layer (1117) having a magnetization in a predetermined direction perpendicular to the layer. An intermediate layer (1115) is interposed between the memory layer (1113) and the initializing layer (1117), the intermediate layer (1115) having a phase transformation from antiferromagnetic to ferromagnetic at temperature T1 for rising temperatures, and a phase transformation from ferromagnetic to antiferromagnetic at temperature T2 for declining temperatures. The temperatures T1, T2 and the Curie temperatures of the memory layer (1113) T c1 , and the initializing layer (1117) T c3 have the following relationship: T2 c1 c3 .