公开(公告)号：EP1987519B1

公开(公告)日：2015-08-19

申请号：EP07718293.9

申请日：2007-01-19

申请人： Marvell World Trade Ltd.

发明人： RAMAMOORTHY, Aditya ,  WU, Zining ,  SUTARDJA, Pantas

IPC分类号： G06F11/10 ,  G11C27/00 ,  G11C11/56 ,  G11C7/10

CPC分类号： G06F11/1068 ,  G06F11/1072 ,  G06F11/1666 ,  G06F2212/403 ,  G11C7/02 ,  G11C7/1006 ,  G11C7/16 ,  G11C11/56 ,  G11C11/5621 ,  G11C16/10 ,  G11C27/005 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2207/16 ,  G11C2211/562 ,  G11C2211/563 ,  H03M13/1177 ,  H03M13/1515

摘要： A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.

公开(公告)号：EP1987519A4

公开(公告)日：2009-07-29

申请号：EP07718293

申请日：2007-01-19

申请人： MARVELL WORLD TRADE LTD

发明人： RAMAMOORTHY ADITYA ,  WU ZINING ,  SUTARDJA PANTAS

IPC分类号： G06F11/10 ,  G11C7/10 ,  G11C11/56 ,  G11C27/00

CPC分类号： G06F11/1068 ,  G06F11/1072 ,  G06F11/1666 ,  G06F2212/403 ,  G11C7/02 ,  G11C7/1006 ,  G11C7/16 ,  G11C11/56 ,  G11C11/5621 ,  G11C16/10 ,  G11C27/005 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2207/16 ,  G11C2211/562 ,  G11C2211/563 ,  H03M13/1177 ,  H03M13/1515

摘要： A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.

公开(公告)号：EP1987519A2

公开(公告)日：2008-11-05

申请号：EP07718293.9

申请日：2007-01-19

申请人： Marvell World Trade Ltd.

发明人： RAMAMOORTHY, Aditya ,  WU, Zining ,  SUTARDJA, Pantas

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G06F11/1068 ,  G06F11/1072 ,  G06F11/1666 ,  G06F2212/403 ,  G11C7/02 ,  G11C7/1006 ,  G11C7/16 ,  G11C11/56 ,  G11C11/5621 ,  G11C16/10 ,  G11C27/005 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2207/16 ,  G11C2211/562 ,  G11C2211/563 ,  H03M13/1177 ,  H03M13/1515

摘要： A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.