A thin film resistance thermometer element and its method of manufacture
    4.
    发明公开
    A thin film resistance thermometer element and its method of manufacture 失效
    Dünnschichtwiderstandsthermometer和Verfahren zu seiner Herstellung。

    公开(公告)号:EP0036247A2

    公开(公告)日:1981-09-23

    申请号:EP81300623.6

    申请日:1981-02-16

    IPC分类号: G01K7/18

    摘要: The resistance thermometer element is made by forming a serpentine pattern 16,18,20 of a thin film of a metal such as platinum deposited on a substrate 10. The deposited metal has a bulk temperature coefficient of resistance (TCR) substantially greaterthan the desired TCR which is established by controlling the thickness of the film to the correct value in a range of thicknesses where TCR changes relatively rapidly with thickness, eg the range 0.05 to 0.8 microns for platinum. The required thickness may be established by deposition at a control rate for a controlled time or by over deposition followed by reduction in thickness by etching. The calibration resistance at the ice point is then independently established by selective removal of shorting links in parts 22, 24, 26, 28 of the pattern.

    摘要翻译: 电阻温度计元件通过形成沉积在衬底10上的诸如铂的金属薄膜的蛇形图案16,18,20来制成。沉积的金属具有基本上大于期望的体积温度系数(TCR) TCR通过在TCR相对快速地变化的厚度范围内控制膜的厚度达到正确的值,例如铂的0.05至0.8微米的范围。 可以通过以控制速率沉积控制时间或通过过度沉积然后通过蚀刻减小厚度来建立所需厚度。 然后通过选择性地去除图案部分22,24,26,28中的短路连接来独立地建立冰点处的校准电阻。