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    METHOD AND APPARATUS FOR VACUUM DIODE-BASED DEVICES WITH ELECTRIDE-COATED ELECTRODES
    1.
    发明公开
    METHOD AND APPARATUS FOR VACUUM DIODE-BASED DEVICES WITH ELECTRIDE-COATED ELECTRODES 失效
    VERFAHREN UND VORRICHTUNGFÜREINVAKUUMDIODENGERÄTMIT ELEKTRIDE-BESCHICHTETENELEKTRODEN

    公开(公告)号：EP1008162A4

    公开(公告)日：2000-06-14

    申请号：EP97942657

    申请日：1997-09-23

    申请人： BOREALIS TECH LTD

    发明人： EDELSON JONATHAN SIDNEY

    IPC分类号： F25B21/00 ,  H01J21/04 ,  H01J21/10 ,  H01J45/00 ,  H01J1/30

    CPC分类号： F25B21/00 ,  F25B2321/003 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  H01J2201/30426 ,  Y02B30/66

    摘要： Vacuum diode-based devices, including vacuum diode heat pumps and vacuum thermionic generators, are described in which the electrodes are coated with an electride (11, 12). These materials have low work functions, which means that contact potential difference between cathode (1) and anode (2) may be set against the effects of space charge, resulting in an improved device whereby anode (2) and cathode (1) may be set at a greater distance from each other than has been previously envisaged.

    摘要翻译： 描述了基于真空二极管的装置，包括真空二极管热泵和真空热离子发生器，其中电极涂覆有电极（11,12）。 这些材料具有低功函数，这意味着阴极（1）和阳极（2）之间的接触电势差可以针对空间电荷的影响而设置，导致改进的器件，由此阳极（2）和阴极（1）可以是 彼此的距离比以前设想的距离更远。

    Electron emitter display device having micro-display array, amplifying circuit, memory device, analog switch, and current control unit
    6.
    发明公开
    Electron emitter display device having micro-display array, amplifying circuit, memory device, analog switch, and current control unit 审中-公开
    电子发射器与微显示器矩阵放大器电路的存储器装置，模拟开关图像显示装置和流量调节单元。

    公开(公告)号：EP1521230A2

    公开(公告)日：2005-04-06

    申请号：EP04256008.6

    申请日：2004-09-29

    申请人： NGK INSULATORS, LTD.

    发明人： Takeuchi, yukihisa, NGK Insulators Ltd. ,  Nanataki, Tsutomu, NGK Insulators Ltd. ,  Ohwada, Iwao, NGK Insulators Ltd.

    IPC分类号： G09G3/22

    CPC分类号： H01J21/04 ,  B82Y10/00 ,  G09G3/22 ,  G11C7/1051 ,  G11C11/30 ,  H01J1/312 ,  H01J19/24 ,  H01J2201/3125

    摘要： A microdevice (10) has an electron emitter (14) including a memory (18) for accumulating electric charges corresponding to an input voltage (Vi), for emitting electrons corresponding to the electric charges accumulated in said memory (18); and an amplifier (16) connected to a power supply (22) and including a collector electrode (20) for capturing the electrons emitted from the electron emitter (14). The atmosphere between at least the electron emitter (14) and the collector electrode (20) is a vacuum. When the electrons emitted from the electron emitter (14) are captured by the collector electrode (20) of the amplifier (16), a collector current (Ic) flows between the collector electrode (20) and the electron emitter (14) to amplify the input voltage (Vi).

    摘要翻译： 微器件（10）具有在电子发射器（14）包括用于积累电荷以对应于输入电压（VI），用于发射电子的对应于（18）在所述存储器中累积的电荷的存储器（18）; 和到放大器（16）连接到电源（22）和包括一个集电极电极（20），用于捕获来自电子发射器（14）发射的电子。 至少电子发射器（14）和集电极电极（20）之间的气氛为真空。 当从电子发射器（14）发射的电子由放大器（16）的集电极电极（20）捕获的，集电极电流（Ic）的集电极电极（20）和所述电子发射器（14）以扩增之间流动 输入电压（VI）。

    IMPROVED VACUUM INTEGRATED ELECTRONIC DEVICE AND MANUFACTURING PROCESS THEREOF
    8.
    发明公开
    IMPROVED VACUUM INTEGRATED ELECTRONIC DEVICE AND MANUFACTURING PROCESS THEREOF 审中-公开
    改进的真空集成电子器件及其制造工艺

    公开(公告)号：EP3171387A1

    公开(公告)日：2017-05-24

    申请号：EP16194697.5

    申请日：2016-10-19

    申请人： STMicroelectronics S.r.l. ,  STMicroelectronics Pte Ltd.

    发明人： PATTI, Davide Giuseppe ,  KIM, Myung Sung

    IPC分类号： H01J9/02 ,  H01J21/10

    CPC分类号： H01J19/02 ,  H01J9/025 ,  H01J9/18 ,  H01J21/04 ,  H01J21/105 ,  H01J21/20 ,  H01J2209/012 ,  H01J2209/02

    摘要： A vacuum integrated electronic device (120) has an anode region (101) of conductive material; an insulating region (102, 104) on top of the anode region; a cavity (54) extending through the insulating region and having a sidewall (53); and a cathode region (109). The cathode region has a tip portion (51, 52) extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.

    摘要翻译： 真空集成电子器件（120）具有导电材料的阳极区域（101） 在所述阳极区域的顶部上的绝缘区域（102,104） 延伸穿过绝缘区域并具有侧壁（53）的空腔（54）; 和阴极区（109）。 阴极区具有在空腔内沿周边延伸的邻近空腔侧壁的尖端部分（51,52）。 阴极区域通过倾斜沉积形成，相对于器件表面的垂线以30-60°的角度进行。

    ELECTRODE COATING FOR ELECTRON EMISSION DEVICES WITHIN CAVITIES
    9.
    发明公开
    ELECTRODE COATING FOR ELECTRON EMISSION DEVICES WITHIN CAVITIES 有权
    HOHLRÄUMEN的ELEKTRODENBESCHICHTUNGFÜRELEKTRONENEMISSVORRICHTUNGEN

    公开(公告)号：EP2937887A1

    公开(公告)日：2015-10-28

    申请号：EP15161025.0

    申请日：2015-03-26

    申请人： NXP B.V.

    发明人： Reimann, Klaus ,  Wunnicke, Olaf ,  In 't Zandt, Michael

    IPC分类号： H01J1/304 ,  H01J1/308 ,  H01J9/24 ,  H01J19/24 ,  H01J19/54 ,  H01J21/04

    CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/308 ,  H01J9/24 ,  H01J19/24 ,  H01J19/54 ,  H01J21/04 ,  H01L27/0248

    摘要： Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

    摘要翻译： 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，将电子发射材料沉积在至少一个第一和第二电极上。 进入孔远离第一和第二电极上的电子发射位置。

    DEVICE FOR ENERGY CONVERSION, ELECTRICAL SWITCHING, AND THERMAL SWITCHING
    10.
    发明公开
    DEVICE FOR ENERGY CONVERSION, ELECTRICAL SWITCHING, AND THERMAL SWITCHING 审中-公开
    装置进行能量转换，电源转换和传热

    公开(公告)号：EP2374166A1

    公开(公告)日：2011-10-12

    申请号：EP09837214.7

    申请日：2009-12-31

    申请人： Tempronics, Inc.

    发明人： Makansi, Tarek

    IPC分类号： H01L35/34

    CPC分类号： H01L35/16 ,  H01J21/04 ,  H01J45/00

    摘要： An improved design for maintaining nanometer separation between electrodes in tunneling, thermo-tunneling, diode, thermionic, thermoelectric, thermo-photovoltaic, current limiting, reset-able fusing, relay, circuit breaker and other devices is disclosed. At least one electrode is of a curved shape whose curvature is altered by temperature. Some embodiments use the nanometer separation to limit or stop current flow. Other embodiments reduce the thermal conduction between the two electrodes when compared to the prior art. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a nanometer gap there-between over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling, or limit current flow, or interrupt current flow.