公开(公告)号：EP0096725A4

公开(公告)日：1985-07-01

申请号：EP83900059

申请日：1982-12-16

申请人： FUJI PHOTO FILM CO LTD

发明人： NISHIZAWA JUN-ICHI

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/374 ,  H01L27/14 ,  H01L31/10

CPC分类号： H01L27/14679 ,  H04N3/15

摘要： PCT No. PCT/JP82/00468 Sec. 371 Date Aug. 16, 1983 Sec. 102(e) Date Aug. 16, 1983 PCT Filed Dec. 16, 1982 PCT Pub. No. WO83/02198 PCT Pub. Date Jun. 23, 1983.A semiconductor image sensor which has photocells arranged in a matrix form is miniaturized and integrated with high density, thereby to increase its light amplification factor and operating speed. To this end, each photocell is formed by a static induction transistor which has a pair of main electrodes, a channel region formed between the main electrodes and a capacitor connected between a control region serving as a photocell and one of the row lines.

公开(公告)号：EP1611776A4

公开(公告)日：2009-09-09

申请号：EP04706081

申请日：2004-01-28

申请人： VARIAN MED SYS INC

发明人： COLBETH RICHARD E ,  MOLLOV IVAN P

IPC分类号： H05G1/64 ,  A61B6/03 ,  G01T20060101 ,  H04N5/32 ,  H04N5/345 ,  H04N5/353 ,  H04N5/378

CPC分类号： H04N3/15 ,  A61B6/032 ,  H04N5/32 ,  H04N5/3454

摘要： A method for providing X-ray image data signals corresponding to a selected portion of a two-dimensional image at an enhanced image resolution. During selective exposure of an X-ray receptor to X-ray radiation corresponding to the subject image, image pixel data corresponding to the region of interest (used pixels) are read out with normal pixel data pixel discharge times and at the normal pixel data rate, while image pixel data corresponding to the region not of interest (unused pixels) are read out also with normal pixel data pixel discharge times and at either the normal pixel data rate or an increased pixel data rate. During such pixel data readout intervals, the X-ray radiation exposure can be continuous or selectively pulsed.

公开(公告)号：EP3373334A1

公开(公告)日：2018-09-12

申请号：EP18155196.1

申请日：2018-02-06

申请人： Samsung Display Co., Ltd.

发明人： Son, Se Wan ,  Lee, Wang Woo ,  Ko, Moo Soon ,  Kim, Jung Hwa ,  An, Jin Sung ,  Lee, Ji Seon

IPC分类号： H01L27/12 ,  H01L27/32

CPC分类号： H04N3/15 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2310/0278 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276

摘要： A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

公开(公告)号：EP1746820A4

公开(公告)日：2010-09-22

申请号：EP05730597

申请日：2005-04-12

申请人： UNIV TOHOKU NAT UNIV CORP

发明人： SUGAWA SHIGETOSHI ,  ADACHI SATORU ,  YAHATA KYOICHI ,  TERADA TATSUYA

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745

CPC分类号： H04N5/3559 ,  H01L27/14609 ,  H04N3/15 ,  H04N5/2355

摘要： A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element C S coupled to the photodiode PD through a transfer transistor Tr1 for accumulating the photoelectric charges overflowing from the photodiode PD. The storage capacitor element C S is structured to accumulate the photoelectric charges overflowing from the photodiode PD in a storage-capacitor-element accumulation period T CS that is set to be a period at a predetermined ratio with respect to an accumulation period of the photodiode PD.

公开(公告)号：EP0088134A4

公开(公告)日：1984-07-05

申请号：EP82902747

申请日：1982-09-17

申请人： SONY CORP

发明人： TAKESHITA KANEYOSHI ATSUGI PLA

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/367 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/30

CPC分类号： H04N3/15 ,  H01L27/14831

摘要： PCT No. PCT/JP82/00374 Sec. 371 Date May 16, 1983 Sec. 102(e) Date May 16, 1983 PCT Filed Sep. 17, 1982 PCT Pub. No. WO83/01170 PCT Pub. Date Mar. 31, 1983.In a solid state image pickup apparatus employing a solid state image pickup device of the interline transfer type which comprises a plurality of photodetectors (1) arranged horizontally and vertically, transfer gate areas (6) each corresponding to each of the photodetectors (1), vertical transfer portions (2), a horizontal transfer portion (4) and an output portion (5), a reading pulse voltage taking a first high level (VR) is applied to each of two of the transfer gate areas (6) adjacent in the vertical direction alternately at every field period, so that signal charges are read out to the vertical transfer portions (2) from the photodetectors (1) corresponding to the transfer gate areas (6) to which the reading pulse voltage is applied, a voltage taking a second high level (VH) lower than the first high level (VR) is applied to the storage regions of the vertical transfer portions (2) during each horizontal video period, transfer pulse voltages taking the low level (VL) in turn at the respective different phases within each horizontal blanking period are applied to the vertical transfer portions (2), so that the signal charges read out to the vertical transfer portions (2) are transferred vertically, and the signal charges transferred vertically are further transferred horizontally through the horizontal transfer portion (4) to the output portion (5), thereby to produce an image pickup signal output.