摘要:
The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II.
The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.
摘要:
In regard to a graphite structure and an electronic component including the graphite structure, the graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.
摘要:
A structured organic film with an added functionality comprising a plurality of segments and a plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be a multi-segment thick structured organic film.
摘要:
A structured organic film with an added functionality comprising a plurality of segments and a plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be a multi-segment thick structured organic film.