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    METHOD FOR THE MANUFACTURE OF HIGHLY PURIFIED 68GE MATERIAL FOR RADIOPHARMACEUTICAL PURPOSES
    1.
    发明公开
    METHOD FOR THE MANUFACTURE OF HIGHLY PURIFIED 68GE MATERIAL FOR RADIOPHARMACEUTICAL PURPOSES 审中-公开

    公开(公告)号：EP3401283A1

    公开(公告)日：2018-11-14

    申请号：EP17170482.8

    申请日：2017-05-10

    申请人： ITM Isotopen Technologien München AG

    发明人： JERNSTRÖM, Jussi ,  ZHERNOSEKOV, Konstantin ,  HARFENSTELLER, Mark ,  KELMENDI, Nevzat

    IPC分类号： C01G17/04 ,  C01G17/00 ,  A61K51/00 ,  G21H5/02

    摘要： The present invention relates to a method for the manufacture of highly purified 68 Ge material for radiopharmaceutical purposes. The invention particularly concerns the production of 68 Ge-API (API = Active Pharmaceutical Ingredient) solution complying with the Guidelines for good manufacturing practices (GMP). Starting material for the method of the present invention can be a 68 Ge stock solution of commercial or other origin as raw material. Such 68 Ge containing raw solutions are purified from potential metal and organic impurities originating from production processes. The radiochemical method disclosed is based on a twofold separation of 68 Ge from organic and metallic impurities with two different adsorbent materials. During the first separation phase 68 Ge is purified from both organic and metallic impurities by adsorption in germanium tetrachloride form, after which hydrolyzed 68 Ge is purified from remaining metallic impurities by cation exchange. The final 68 Ge-API-product e.g. fulfills the regulatory requirements for specifications of the GMP production of 68 Ge/ 68 Ga generators.

    Verfahren zur Herstellung von Germaniumdihalogenid-Ether-Addukten
    2.
    发明公开
    Verfahren zur Herstellung von Germaniumdihalogenid-Ether-Addukten 失效
    Verfahren zur Herstellung von Germaniumdihaliodid-Ether-Addukten。

    公开(公告)号：EP0568074A1

    公开(公告)日：1993-11-03

    申请号：EP93106989.2

    申请日：1993-04-29

    申请人： Consortium für elektrochemische Industrie GmbH

    发明人： Herrmann, Wolfgang, Prof. Dr. ,  Denk, Michael, Dr.

    IPC分类号： C01G17/04 ,  C07F7/00

    CPC分类号： C07F7/003 ,  C01G17/04

    摘要： Es wird ein Herstellungsverfahren für Halogenide des zweiwertigen Germaniums als Addukte mit einem Ether, insbesondere von Addukten mit der Formel GeX₂·(C₄H₈O₂), wobei X bevorzugt Chlor oder Brom bedeutet und als Ether bevorzugt 1,4-Dioxan verwendet wird, beschrieben. Germaniumtetrahalogenide lassen sich in Gegenwart eines Ethers, eines Organosilans und zumindest katalytischer Mengen eines Metallhydrides in einer einstufigen Reaktion und mit hohen Ausbeuten zu den Zielverbindungen reduzieren.

    摘要翻译： 描述了一种制备二价锗作为加成物与醚，特别是具有式GeX 2（C 4 H 8 O 2）的加合物的卤化物的方法，其中X优选为氯或溴，优选使用醚为1,4-二恶烷。 可以在醚，有机硅烷和至少催化量的金属氢化物的存在下还原四卤化锗，以一步反应和高收率得到目标化合物。

    PROCESS FOR PRODUCING FLUORIDE GAS
    5.
    发明公开
    PROCESS FOR PRODUCING FLUORIDE GAS 审中-公开
    VERFAHREN ZUR HERSTELLUNG VON FLUORIDGAS

    公开(公告)号：EP2311776A1

    公开(公告)日：2011-04-20

    申请号：EP09804813.5

    申请日：2009-06-08

    申请人： Stella Chemifa Corporation

    发明人： WAKI,Masahide ,  YABUNE,Tatsuhiro ,  MIYAMOTO,Kazuhiro ,  HIRANO,Kazutaka

    IPC分类号： C01B9/08 ,  C01B25/10 ,  C01B33/107 ,  C01B35/06 ,  C01G17/04 ,  C01G28/00

    CPC分类号： C01B9/08 ,  C01B33/10705 ,  C01B35/061 ,  C01B35/063 ,  C01G17/04 ,  C01G28/007

    摘要： Disclosed is a process for producing a fluoride gas that can provide fluoride gases such as BF 3 , SiF 4 , GeF 4 , PF 5 or AsF 5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing atoms, which, together with fluorine atoms, can form polyatomic ions, is added to a hydrogen fluoride solution to produce the polyatomic ions in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atoms and the atoms that, together with the fluorine atoms, can form polyatomic ions.

    摘要翻译： 公开了一种以简单的方式以降低的生产成本生产能够提供氟化物气体如BF 3，SiF 4，GeF 4，PF 5或AsF 5的氟化物气体的方法。 该方法的特征在于，将包含与氟原子一起形成多原子离子的原子的化合物加入氟化氢溶液中以在氟化氢溶液中产生多原子离子，并释放包含氟原子的氟化物气体 并且与氟原子一起可以形成多原子离子的原子。

    Process for the direct production of germanium tetrachloride from hydrated germanate-containing solids using gaseous hydrogen chloride
    6.
    发明公开
    Process for the direct production of germanium tetrachloride from hydrated germanate-containing solids using gaseous hydrogen chloride 有权
    生产四氯化锗的由水合固体锗的用气态氯化氢反应

    公开(公告)号：EP1063200A1

    公开(公告)日：2000-12-27

    申请号：EP00304998.8

    申请日：2000-06-13

    申请人： LUCENT TECHNOLOGIES INC.

    发明人： Bohrer, Michael Philip ,  Po-Yen Lu ,  Seibles, Lawrence

    IPC分类号： C01G17/04 ,  C01B9/02

    CPC分类号： C01B9/02 ,  B01D2257/2045 ,  C01G17/04

    摘要： The invention relates to a system and method for the recovery of germanium from the Modified Chemical Vapor Deposition (MCVD) processing wastes by chemical conversion and recovery of germanium from the solid cake product. In the present method, the direct reaction of gaseous hydrogen chloride with the recovered materials effects the rapid and complete chlorination of the germanates, yielding germanium tetrachloride. The germanium tetrachloride product is completely volatilized and removed from the mixture during the exothermic process.

    摘要翻译： 本发明涉及用于从所述改进的化学气相沉积（MCVD）加工废弃物锗通过化学转换和从固体饼产物锗的恢复的恢复的系统和方法。 在本方法中，氯化氢气体与所回收的物质效果锗的快速和完全氯化，得到四氯化锗的直接反应。 四氯化锗产品完全呼叫挥发并在放热过程中从混合物中除去。

    VERFAHREN ZUR HERSTELLUNG HÖHERER SILANE MIT VERBESSERTER AUSBEUTE
    9.
    发明公开
    VERFAHREN ZUR HERSTELLUNG HÖHERER SILANE MIT VERBESSERTER AUSBEUTE 审中-公开
    用于生产效率提高高次硅烷

    公开(公告)号：EP2731912A1

    公开(公告)日：2014-05-21

    申请号：EP12723426.8

    申请日：2012-05-15

    申请人： Evonik Degussa GmbH

    发明人： LANG, Jürgen Erwin ,  RAULEDER, Hartwig ,  MÜH, Ekkehard

    IPC分类号： C01B33/107 ,  C01G17/04

    CPC分类号： C01B33/10773 ,  B01J19/12 ,  C01B33/107 ,  C01G17/04

    摘要： The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI
    4 or GeCI
    4 , a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns
    -1 to 1 kV ns
    -1 and a pulse width b of 500 ns to 100 µs, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge
    2 Cl
    6 is obtained from the liquid phase.

    Method for producing high purity germanium tetrafluoride
    10.
    发明公开
    Method for producing high purity germanium tetrafluoride 审中-公开
    生产高纯度四氟化锗的方法

    公开(公告)号：EP1394114A2

    公开(公告)日：2004-03-03

    申请号：EP03255065.9

    申请日：2003-08-14

    申请人： Advance Research Chemicals, Inc.

    发明人： Bhagat, Sudhir Solomon ,  Meshri, Dayal T. ,  Meshri, Sanjay D. ,  Petty, Michale Shane

    IPC分类号： C01G17/04

    CPC分类号： C01G17/04

    摘要： A method of producing high purity germanium tetrafluoride comprising the step of flowing a mixture of inert gas and fluorine gas through a reactor chamber preferably containing germanium powder. The reactor effluent stream is conducted through at least one product trap effective for condensing and retaining at least a portion of the germanium tetrafluoride product. The product is preferably then purified by repeatedly subliming the product as necessary to remove volatile impurities.

    摘要翻译： 一种生产高纯度四氟化锗的方法，包括使惰性气体和氟气的混合物流过优选含有锗粉的反应室的步骤。 反应器流出物流通过至少一个有效用于冷凝和保留至少一部分四氟化锗产物的产物阱。 优选通过根据需要反复升华产物以除去挥发性杂质来纯化产物。