公开(公告)号：EP3716315B1

公开(公告)日：2024-10-02

申请号：EP18880391.0

申请日：2018-10-22

IPC分类号： H01L21/66 ,  C30B13/00 ,  C30B29/06 ,  C30B33/04

CPC分类号： C30B13/00 ,  C30B29/06 ,  H01L22/12 ,  H01L22/20 ,  C30B33/04

公开(公告)号：EP4423326A1

公开(公告)日：2024-09-04

申请号：EP22812517.5

申请日：2022-10-26

申请人： SaxonQ GmbH

发明人： PLENIO, Martin Bodo ,  BAEUERLE, Peter ,  MENA OSTERITZ, Elena ,  KREUZER, Franziska ,  MEIJER, Jan

IPC分类号： C30B29/04 ,  C23C14/48 ,  B82Y10/00 ,  G06N10/40 ,  H01L21/265 ,  C30B29/36 ,  C30B31/22 ,  C30B33/04 ,  C30B29/06

CPC分类号： C30B29/04 ,  C23C14/48 ,  B82Y10/00 ,  G06N10/40 ,  C30B29/06 ,  C30B29/36 ,  C30B33/04 ,  C30B31/22 ,  H01L21/0415

公开(公告)号：EP3146086A1

公开(公告)日：2017-03-29

申请号：EP15711748.2

申请日：2015-03-23

申请人： Quertech

发明人： BUSARDO, Denis ,  GUERNALEC, Frédéric

IPC分类号： C23C14/48 ,  C30B29/20 ,  C30B33/04 ,  G02B1/11 ,  G02B1/12 ,  G06F3/044

CPC分类号： C23C14/0015 ,  C01F7/021 ,  C23C14/48 ,  C30B29/20 ,  C30B33/04 ,  G02B1/02 ,  G02B1/11 ,  G02B1/113 ,  G02B1/12 ,  G06F3/044 ,  G06F2203/04103

摘要： A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

摘要翻译： 蓝宝石材料的处理方法，所述方法包括在蓝宝石材料的表面的轰击，所述表面面向从蓝宝石材料的介质不同，通过单和/或多电荷气体离子束，以便在离子产生 在蓝宝石材料注入层，worin的离子从该列表由氦气的元件（He），氖（Ne），氩（Ar），氪（KR）氙（Xe），硼的离子选择（B ），碳（C），氮（N），氧（O），氟（F），硅（Si），磷（P）和硫（S）。 所述方法的使用，以获得具有在可见光范围内具有高透射电容式触摸面板。

公开(公告)号：EP3004432A1

公开(公告)日：2016-04-13

申请号：EP14729635.4

申请日：2014-06-04

申请人： Element Six Technologies Limited ,  Element Six N.V.

发明人： PELS, Gerrit ,  DE WIT, Hendrikus Gerardus Maria ,  MCCLYMONT, Mark Robin

IPC分类号： C30B29/04 ,  C30B33/04 ,  C30B33/08 ,  C30B33/00

CPC分类号： C30B25/16 ,  B24B49/10 ,  B26D5/007 ,  C30B29/04 ,  C30B33/00 ,  C30B33/04 ,  C30B33/08

摘要： A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm2, the method comprising: (a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation from a smooth target surface profile, said first root mean square deviation being no more than 5 μm; (b) analysing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and (c) selectively processing over only the protruding regions on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm.

公开(公告)号：EP1479796A3

公开(公告)日：2010-08-18

申请号：EP04252865.3

申请日：2004-05-17

申请人： Kawatetsu Mining Co., LTD.

发明人： Matsushita, Mitsuyoshi ,  Iwasaki, Yousuke

IPC分类号： C30B33/00 ,  C30B29/32 ,  H01L41/00 ,  H03H9/17 ,  C30B29/30 ,  C30B33/04 ,  H04R31/00

CPC分类号： C30B33/04 ,  C30B29/30 ,  C30B29/32 ,  C30B33/06 ,  H01L41/18 ,  H01L41/257 ,  H01L41/41 ,  H03H9/02031 ,  H03H9/176 ,  H04R17/00

摘要： A piezoelectric single crystal device for actively employing the electromechanical coupling factor k 31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

公开(公告)号：EP1980652A3

公开(公告)日：2010-05-12

申请号：EP08150383.1

申请日：2008-01-17

申请人： Samsung Electronics Co., Ltd.

发明人： Jang, Eun Joo Samsung Advanced Inst. of Techn. Mt. ,  Jun, Shin Ae Samsung Advanced Inst. of Techn. Mt. ,  Lim, Jung Eun Samsung Advanced Inst. of Techn. Mt. ,  Choi, Hye Ran Samsung Advanced Inst. of Techn. Mt.

IPC分类号： C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60 ,  C30B33/02 ,  C30B33/04

CPC分类号： C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/605 ,  Y10T428/2989

摘要： Disclosed herein is a multilayer nanocrystal structure (300) comprising a nanocrystal alloy core (100) comprising two or more nanocrystals (10,50) and including an alloy interlayer (30) formed at an interface between the two or more nanocrystals (10,50), and one or more layers of nanocrystal shells (110,120) formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells (110,120) each have different band gaps. The multilayer nanocrystal structure (300) can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.

公开(公告)号：EP1645664A1

公开(公告)日：2006-04-12

申请号：EP04748916.6

申请日：2004-05-27

申请人： Vins, Viktor Genrihovich

发明人： Vins, Viktor Genrihovich

IPC分类号： C30B33/04 ,  C30B33/02 ,  C30B29/04 ,  C01B31/06

CPC分类号： C30B29/04 ,  B01J3/062 ,  B01J19/085 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0695 ,  C01B32/28

摘要： Die Erfindung gehört zum Bereich der Diamantenbearbeitung (Diamantenveredelung), die das Anfärben mit verschiedenen Farben betrifft. Die Erfindung kann in der Schmuckwarenindustrie Anwendung finden. Das Verfahren besteht darin, dass im Kristallgitter eines Naturdiamanten vom Typ la, der Verarmungstypen enthält, oder im Kristallgitter eines Naturdiamanten vom Typ la mit hohem Stickstoffgehalt, der mehr als 800 ppm Stickstoffbeimischung vom Verarmungstyp A oder B1 enthält, isolierte Stickstoffatome in der Substitutionsposition gebildet werden, und zwar vom Verarmungstyp C. Der den Verarmungstyp A enthaltende Naturdiamant vom Typ la wird in einem Hochdruckgerät bei einer Temperatur von mehr als 2150° C bei einem stabilisierten Druck von 6,0-7,0 Gpa ausgeglüht, dann wird er durch einen Elektronenstrom von 5x10
15 -5x10
18 cm
-2 bei 2-4 MEV bestrahlt und dem Aushärten im Vakuum bei einer Temperatur von mindestens 1100° C unterzogen. Der Naturdiamant vom Typ la mit hohem Stickstoffgehalt, der mehr als 800 ppm Stickstoffbeimischung vom Verarmungstyp A oder B1 enthält, wird durch einen hochenergetischen Elektronenstrom mit einer Bestrahlungsdosis von mehr als 10
19 cm
-2 bestrahlt und dem Aushärten im Vakuum bei einer Temperatur von mindestens 1100° C unterzogen. Es ergeben sich Diamanten mit einer Phantasierotfarbe, die für Brillanten mit festen NV-Färbungszentren bestimmt sind, die im Wellenlängenbereich von 400-640 nm absorbieren.

公开(公告)号：EP0853600A4

公开(公告)日：1999-03-24

申请号：EP96933675

申请日：1996-10-02

申请人： IND RES LTD

发明人： STAINES MICHAEL

IPC分类号： C30B33/04 ,  C04B35/505 ,  H01B12/00 ,  H01B12/06 ,  H01B13/00 ,  H01L20060101 ,  H01L21/00 ,  H01L39/24 ,  H05B6/00

CPC分类号： H01L39/2419

摘要： A method of inducing biaxial particle alignment in a body of crystalline particles of a material such as a high temperature superconducting material, having anisotropic magnetic susceptibility so that at least a major portion of the crystalline particles have at least two crystalline axes generally parallel, comprises subjecting the particles to a magnetic field which varies cyclically relative to the body of crystalline particles with time, and which has an average magnitude which is a maximum in a first direction, a lower average magnitude in a second direction generally orthogonal to said first direction and a minimum or zero average magnitude in a third direction generally orthogonal to said first and second directions. Alignment of the axis of maximum magnetic susceptibility of the particles generally with the direction of maximum average magnitude and the axis of minimum magnetic susceptibility of the particles generally with the minimum or zero average magnitude direction is induced.

公开(公告)号：EP0750058A2

公开(公告)日：1996-12-27

申请号：EP96304642.0

申请日：1996-06-24

申请人： DE BEERS INDUSTRIAL DIAMOND DIVISION (PROPRIETARY) LIMITED

发明人： Prins, Johan Frans

IPC分类号： C30B33/00 ,  C30B33/02 ,  C30B33/04

CPC分类号： C30B31/22

摘要： A crystalline substrate (10) such as diamond, cubic boron nitride or silicon carbide is doped with a dopant atom such as boron, phosphorus or arsenic. The method includes the steps of creating a first damaged layer (14) containing vacancies and interstitial atoms in the crystal lattice of the crystalline substrate (10), implanting the dopant atoms under conditions to create a second damaged layer (18) separate from the first damaged layer (14) and containing the dopant atoms, and causing the dopant atoms in the second layer (18) to diffuse out of that layer (18) and into vacancies in the first layer (14) and thereby occupy substitutional positions in that layer (14).

摘要翻译： 诸如金刚石，立方氮化硼或碳化硅的晶体衬底（10）掺杂有诸如硼，磷或砷的掺杂剂原子。 该方法包括以下步骤：在晶体衬底（10）的晶格中产生含有空位和间隙原子的第一损伤层（14），在条件下注入掺杂剂原子以产生与第一损伤层 损坏的层（14）并且包含掺杂剂原子，并且使得第二层（18）中的掺杂剂原子从该层（18）扩散到第一层（14）中的空位，从而占据该层中的替代位置 （14）。

公开(公告)号：EP0377566A4

公开(公告)日：1990-12-27

申请号：EP88905269

申请日：1988-05-18

申请人： GIANCOLA, DOMINIC J.

发明人： GIANCOLA, DOMINIC J.

IPC分类号： C04B41/80 ,  C01G1/00 ,  C01G3/00 ,  C04B35/00 ,  C04B35/45 ,  C04B35/64 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F3/00 ,  C30B33/04 ,  H01B12/04 ,  H01B13/00 ,  H01L39/24 ,  H01B12/00 ,  H01L39/22

CPC分类号： C22F3/00 ,  C04B35/4508 ,  C04B35/64 ,  H01L39/2409 ,  H01L39/2419 ,  Y10S505/727 ,  Y10S505/815