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    PIEZOELECTRIC DEVICE
    2.
    发明授权
    PIEZOELECTRIC DEVICE 有权
    压电元件

    公开(公告)号：EP1703571B1

    公开(公告)日：2011-10-05

    申请号：EP04807733.3

    申请日：2004-12-24

    申请人： Ogawa, Toshio ,  JFE Mineral Company

    发明人： OGAWA, Toshio

    IPC分类号： H01L41/08 ,  H01L41/187 ,  H01L41/22 ,  H03H9/17 ,  H04R17/00

    CPC分类号： H01L41/094 ,  H01L41/18 ,  H03H9/176 ,  H03H9/585

    摘要： The present invention provides a piezoelectric device having an extremely good secular characteristic, which is a unimorph (or bimorph) element obtained by sticking to a metal plate a piezoelectric single crystal having a giant-lateral-effect piezoelectric performance of a lateral-vibration-mode electromechanical coupling factor k 31 not smaller than 70%, the unimorph (or bimorph) element having a bending-vibration-mode electromechanical coupling factor k b not smaller than 50 % (or 60 %). A plate-form single crystal 10 of PZNT or PMNT is brought into a mono-domain in its thickness direction and in its plate surface so as to be provided with the giant-lateral-effect piezoelectric characteristic, and the single crystal 10 that does not cause secular deterioration is stuck to a metal plate 20 (shim plate) while the mono-domain quality is kept as it is, as a result of which a unimorph 1 (or bimorph 2) is fabricated.

    PIEZOELECTRIC DEVICE
    4.
    发明公开
    PIEZOELECTRIC DEVICE 有权
    。。。。。。

    公开(公告)号：EP1703571A1

    公开(公告)日：2006-09-20

    申请号：EP04807733.3

    申请日：2004-12-24

    申请人： Ogawa, Toshio ,  JFE Mineral Company ,  Fuji Ceramics Corporation

    发明人： OGAWA, Toshio

    IPC分类号： H01L41/08 ,  H01L41/187 ,  H01L41/22 ,  H03H9/17 ,  H04R17/00

    CPC分类号： H01L41/094 ,  H01L41/18 ,  H03H9/176 ,  H03H9/585

    摘要： The present invention provides a piezoelectric device having an extremely good secular characteristic, which is a unimorph (or bimorph) element obtained by sticking to a metal plate a piezoelectric single crystal having a giant-lateral-effect piezoelectric performance of a lateral-vibration-mode electromechanical coupling factor k 31 not smaller than 70%, the unimorph (or bimorph) element having a bending-vibration-mode electromechanical coupling factor k b not smaller than 50 % (or 60 %). A plate-form single crystal 10 of PZNT or PMNT is brought into a mono-domain in its thickness direction and in its plate surface so as to be provided with the giant-lateral-effect piezoelectric characteristic, and the single crystal 10 that does not cause secular deterioration is stuck to a metal plate 20 (shim plate) while the mono-domain quality is kept as it is, as a result of which a unimorph 1 (or bimorph 2) is fabricated.

    摘要翻译： 本发明提供一种具有非常好的长期特性的压电器件，它是通过将具有横向振动模式的巨大横向效应的压电性能的压电单晶粘附到金属板而获得的单压电晶片（或双压电晶片） 机电耦合系数k 31不小于70％，具有不小于50％（或60％）的弯曲振动模式机电耦合因子kb的单压电晶片（或双压电晶片）元件。 PZNT或PMNT的板状单晶10在其厚度方向和板表面上形成单畴，从而具有巨大的横向效应的压电特性，并且单晶10不是 导致单畴劣化粘附到金属板20（垫板），同时保持单畴质量，因此制造了单压片1（或双压电晶片2）。