MICRO ELECTRO-MECHANICAL SYSTEM SENSOR
    6.
    发明公开

    公开(公告)号:EP4207597A1

    公开(公告)日:2023-07-05

    申请号:EP22194650.2

    申请日:2022-09-08

    IPC分类号: H03H9/02 G01H3/00 G01H11/06

    摘要: Provided is a micro electro-mechanical system (MEMS) sensor including a substrate including a first cavity, a first frame including a second cavity at least partially overlapping the first cavity, at least a portion of the first frame being spaced apart from the substrate, a plurality of resonators, each of the plurality of resonators including a first end connected to the first frame and a second end extending into the second cavity, and a second frame including a first region connected to the first frame and a second region spaced apart from the first frame and connected to the substrate.

    MICRO-ELECTROMECHANICAL TRANSDUCER WITH REDUCED SIZE

    公开(公告)号:EP4007305A1

    公开(公告)日:2022-06-01

    申请号:EP21210026.7

    申请日:2021-11-23

    摘要: The present invention relates to a micro-electromechanical transducer comprising a pressure detecting arrangement adapted to detect generated pressure variations, and provide an output signal in response to the detected pressure variations, wherein the pressure detecting arrangement comprises a microphone cartridge and a signal processing unit; a pressure generating arrangement adapted to generate pressure variations in response to vibrations thereof; and a volume separating element comprising one or more openings, wherein the microphone cartridge is at least partly arranged in a first opening of the volume separating element in order to reduce the overall height of the micro-electromechanical transducer. The present invention further relates to a hearing device comprising a micro-electromechanical transducer.

    SPINTRONIC MECHANICAL SHOCK AND VIBRATION SENSOR DEVICE

    公开(公告)号:EP3623777A1

    公开(公告)日:2020-03-18

    申请号:EP19195762.0

    申请日:2019-09-05

    IPC分类号: G01H11/02 G01H11/06 G01L1/20

    摘要: A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, an elastic layer, and a tunnel barrier. The free layer is spaced apart from the pinned layer by the tunnel barrier and the elastic layer. The processing circuitry is configured to measure a resistance at the MTJ element and determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.