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102 条记录 (耗时 0.014 秒)

    Magnetron
    3.
    发明公开
    Magnetron 有权
    磁控

    公开(公告)号：EP1553615A3

    公开(公告)日：2011-02-02

    申请号：EP05000352.4

    申请日：2005-01-10

    申请人： Panasonic Corporation

    发明人： Nagisa, Kuwahara ,  Masayuki, Aiga ,  Takeshi, Ishii

    IPC分类号： H01J23/20 ,  H01J25/587

    CPC分类号： H01J25/587 ,  H01J23/20

    摘要： For an anode assembly 51 of a magnetron, a plurality of plate shaped vanes 54 radially arranged at an inner circumference of the roughly round shaped anode assembly 53 has a end portion arranged at a central axis of the anode assembly 53 with a step shape Df having a reduced thickness in a range of predetermined length L from an end portion, so that increase of the facing area of the respective adjacent plate shaped vanes 54 is suppressed while the separation distance of the end portions of the vanes is secured.

    摘要翻译： 对于磁控管的阳极组件51，径向布置在大致圆形的阳极组件53的内周处的多个板状叶片54具有布置在阳极组件53的中心轴线处的具有阶梯形状Df的端部 在距离端部预定长度L的范围内减小厚度，使得在确保叶片端部的分离距离的同时，抑制各个相邻板形叶片54的相对面积的增大。

    Magnetron
    4.
    发明公开
    Magnetron 有权
    磁控

    公开(公告)号：EP1482531A3

    公开(公告)日：2008-02-20

    申请号：EP04250016.5

    申请日：2004-01-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Shon, Jong-Chull ,  Rayskiy, Boris V. ,  Ha, Hyun-Jun

    IPC分类号： H01J23/20 ,  H01J23/213 ,  H01J23/22 ,  H01J25/587

    CPC分类号： H01J25/587 ,  H01J23/20 ,  H01J23/213 ,  H01J23/22

    摘要： A magnetron includes semi-circularly shaped electric field adjusting grooves (150) provided on surfaces of outer ends of vanes (104) brought into contact with an inner surface of a positive polar body (102) to make distribution of an electric field uniform on the surfaces of the outer ends of the vanes (104). Accordingly, the electric field becomes uniform by the electric field adjusting grooves (150) provided on the surfaces of the outer ends of the vanes (104), so that generation of undesirable harmonics is suppressed.

    摘要翻译： 磁控管包括设置在与正极体（102）的内表面接触的叶片（104）的外端表面上的半圆形电场调节槽（150），以使电场在 叶片（104）的外端的表面。 相应地，通过设置在叶片（104）的外端表面上的电场调节槽（150），电场变得均匀，从而抑制了不希望的谐波的产生。

    Capacitor
    5.
    发明公开
    Capacitor 审中-公开
    电容器

    公开(公告)号：EP1020880A3

    公开(公告)日：2004-12-01

    申请号：EP00300172.4

    申请日：2000-01-11

    申请人： E2V Technologies (UK) Limited

    发明人： Aiken, Steven

    IPC分类号： H01G4/28 ,  H01J23/20 ,  H01J23/40

    CPC分类号： H01G4/28 ,  H01J23/207 ,  H01J23/54 ,  H01J2225/04

    摘要： A capacitor 1 includes a conductive tube 2, covered by insulating material 3 and a layer of conductive material 4 located at the central part of the tube 2. The geometry presents a low inherent inductance and a continuous, distributed conductance. The capacitor 1 may be used as a bypass capacitor in an IOT amplifier to reduce stray and leakage high frequency radiation, in one amplifier being located within the inner wall 11 of an annular input cavity 10.

    摘要翻译： 电容器1包括被绝缘材料3覆盖的导电管2以及位于管2的中心部分处的导电材料层4.该几何形状具有低固有电感和连续分布的电导。 在一个放大器位于环形输入腔10的内壁11内的情况下，电容器1可以用作IOT放大器中的旁路电容器以减少杂散和泄漏高频辐射。

    ELECTRON BEAM TUBES
    7.
    发明公开
    ELECTRON BEAM TUBES 有权
    电子管

    公开(公告)号：EP1034556A1

    公开(公告)日：2000-09-13

    申请号：EP98956995.9

    申请日：1998-11-27

    申请人： EEV LIMITED

    发明人： WILCOX, David, Mark ,  BOWLER, Darrin

    IPC分类号： H01J25/02 ,  H01J23/20

    CPC分类号： H01J25/02 ,  H01J23/20

    摘要： An electron beam tube such as a klystron includes a penultimate resonant cavity (22) located before the output cavity (14). The penultimate resonant cavity (22) is arranged to be inductively coupled, being resonant at a frequency which is slightly greater than a harmonic frequency. This provides increased sharpening of bunches of electrons arriving at the output cavity (14) giving increased efficiency at the output.

    Multiplecavity klystron
    8.
    发明公开
    Multiplecavity klystron 失效
    Mehrkammer，速调管

    公开(公告)号：EP0709871A1

    公开(公告)日：1996-05-01

    申请号：EP95116590.1

    申请日：1995-10-20

    申请人： NEC CORPORATION

    发明人： Suzuki, Wako, c/o NEC Corporation

    IPC分类号： H01J23/20 ,  H01J25/10

    CPC分类号： H01J23/20 ,  H01J2225/10

    摘要： A multiplecavity klystron, which has a wide range of frequencies in which it can be used and is capable of operating at high frequencies, comprises first (101,201) and second (101',201') resonant cavities. At least one of resonant frequencies in TEM and TE11 modes of the second (101',201') resonant cavity is lower than the operating frequency of the first resonant cavity (101,201), and the other of resonant frequencies in TEM and TE11 modes of the second resonant cavity (101',201') is different from the operating frequency of the first resonant cavity (101,201).

    摘要翻译： 具有可以使用并且能够以高频率工作的宽频率范围的多重速调管包括第一（101,201）和第二（101'，201'）谐振腔。 第二（101'，201'）谐振腔的TEM和TE11模式的谐振频率中的至少一个低于第一谐振腔（101,201）的工作频率，而TEM和TE11模式中的另一谐振频率 第二谐振腔（101'，201'）与第一谐振腔（101,201）的工作频率不同。

    Wide-band extended interaction device
    9.
    发明公开
    Wide-band extended interaction device 失效
    宽带扩展交互设备

    公开(公告)号：EP0291487A3

    公开(公告)日：1990-12-05

    申请号：EP88870076.2

    申请日：1988-05-04

    申请人： AGENCE SPATIALE EUROPEENNE

    发明人： Perring, Dudley

    IPC分类号： H01J25/11 ,  H01J23/24 ,  H01J23/20

    CPC分类号： H01J23/20 ,  H01J23/24 ,  H01J25/11

    摘要： A resonant cavity (10) arranged for an electron beam to pass therethrough, is made of two spaced apart parallel substantially planar members (11,12) movable with respect to each other in a direction perpendicul­ar to their major surfaces, at least one of said members having a delay line structure (13A-13B) on its inner face within the gap between said two members. Means (e.g. 14) are arranged for moving the members relative to each other so as to vary the spacing between said members, whereby the oscillation fre­quency is tuned easily. The resonant cavity can be used to realize wide-band extended interaction oscil­lators and klystron amplifiers.