公开(公告)号：EP4309217A1

公开(公告)日：2024-01-24

申请号：EP22713581.1

申请日：2022-03-07

申请人： International Business Machines Corporation

发明人： MIGNOT, Yann ,  VAN DER STRATEN, Oscar ,  HOUSSAMEDDINE, Dimitri

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

公开(公告)号：EP4278391A1

公开(公告)日：2023-11-22

申请号：EP22717313.5

申请日：2022-03-14

申请人： Allegro MicroSystems, LLC

发明人： ROMERO, Hernán, D. ,  MONREAL, Gerardo, A.

IPC分类号： H01L43/06 ,  H01L43/04 ,  H01L27/22 ,  G01R33/07

公开(公告)号：EP4226424A1

公开(公告)日：2023-08-16

申请号：EP21777693.9

申请日：2021-09-14

申请人： International Business Machines Corporation

发明人： HEKMATSHOARTABARI, Bahman ,  REZNICEK, Alexander ,  ANDO, Takashi ,  GONG, Nanbo

IPC分类号： H01L27/22 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/24

公开(公告)号：EP4115455A2

公开(公告)日：2023-01-11

申请号：EP21809794.7

申请日：2021-03-03

申请人： Wisconsin Alumni Research Foundation

发明人： EOM, Chang-Beom ,  NAN, Tianxiang ,  SCHAD, Jonathon

IPC分类号： H01L43/02 ,  H01L29/78 ,  H01L29/82 ,  H01L27/22

公开(公告)号：EP4092771A1

公开(公告)日：2022-11-23

申请号：EP21182315.8

申请日：2021-06-29

申请人： United Microelectronics Corp.

发明人： KUO, Chih-Wei ,  HSU, Chia-Chang

IPC分类号： H01L43/08 ,  H01L27/22 ,  G11C11/16

摘要： A semiconductor device includes a substrate, a first magnetic tunnel junction (MTJ) structure, a second MTJ structure, and an interconnection structure. The first MTJ structure, the second MTJ structure, and the interconnection structure are disposed on the substrate. The interconnection structure is located between the first MTJ structure and the second MTJ structure in a first horizontal direction, and the interconnection structure includes a first metal interconnection and a second metal interconnection. The second metal interconnection is disposed on and contacts the first metal interconnection. A material composition of the second metal interconnection is different from a material composition of the first metal interconnection.

公开(公告)号：EP4044239A1

公开(公告)日：2022-08-17

申请号：EP21772655.3

申请日：2021-05-24

申请人： Changxin Memory Technologies, Inc.

发明人： PING, Er-Xuan ,  WANG, Xiaoguang ,  WU, Baolei ,  WU, Yulei

IPC分类号： H01L27/22 ,  G11C11/02 ,  G11C11/16 ,  G11C14/00

摘要： The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform, so that the DRAM and the MRAM can be fabricated on the same platform more easily, and the production cost is reduced.

公开(公告)号：EP4020606A2

公开(公告)日：2022-06-29

申请号：EP21216625.0

申请日：2021-12-21

申请人： Everspin Technologies, Inc.

发明人： AGGARWAL, Sanjeev ,  SHIMON ,  NAGEL, Kerry Joseph

IPC分类号： H01L43/12 ,  H01L27/22

摘要： Manufacturing of magnetoresistive devices comprises forming a first magnetic region (120), an intermediate region (130), and a second magnetic region (160) of a magnetoresistive stack above a via (105), removing at least a portion of the second magnetic region using a first etch, removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch, and treating at least a portion of redeposited material by removing it using a third etch and/or by rendering it electrically nonconductive, particularly by oxidation. The first, second, and third etches can be ion beam etching (IBE) or reactive ion etching (RIE) steps.

公开(公告)号：EP3618117B1

公开(公告)日：2022-05-11

申请号：EP18191739.4

申请日：2018-08-30

发明人： BULJA, Senad ,  RULIKOWSKI, Pawel ,  ZAKRZEWSKA, Anna

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L27/22 ,  G11C13/00

公开(公告)号：EP3896692A1

公开(公告)日：2021-10-20

申请号：EP20184745.6

申请日：2020-07-08

申请人： United Microelectronics Corp.

发明人： WANG, Hui-Lin ,  HSU, Po-Kai ,  CHEN, Hung-Yueh ,  WANG, Yu-Ping

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

摘要： A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar.

公开(公告)号：EP2392029B1

公开(公告)日：2021-09-08

申请号：EP10702808.6

申请日：2010-02-02

发明人： GU, Shiqun ,  KANG, Seung, H. ,  ZHU, Xiaochun

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12