公开(公告)号：EP2020027A2

公开(公告)日：2009-02-04

申请号：EP07870667.8

申请日：2007-05-11

申请人： International Business Machines Corporation

发明人： YANG, Chih-Chao ,  VAN DER STRATEN, Oscar

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76834 ,  H01L21/288 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76852 ,  H01L2924/0002 ,  H01L2924/00

摘要： A reliable and mechanical strong interconnect structure is provided that does not include gouging features in the bottom of the an opening, particularly at a via bottom. Instead, the interconnect structures of the present invention utilize a Co-containing buffer layer that is selectively deposited on exposed surfaces of the conductive features that are located in a lower interconnect level. The selective deposition is performed through at least one opening that is present in a dielectric material of an upper interconnect level. The selective deposition is performed by electroplating or electroless plating. The Co-containing buffer layer comprises Co and at least one of P and B. W may optionally be also present in the Co-containing buffer layer.

公开(公告)号：EP4309217A1

公开(公告)日：2024-01-24

申请号：EP22713581.1

申请日：2022-03-07

申请人： International Business Machines Corporation

发明人： MIGNOT, Yann ,  VAN DER STRATEN, Oscar ,  HOUSSAMEDDINE, Dimitri

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

公开(公告)号：EP4264692A1

公开(公告)日：2023-10-25

申请号：EP21831285.8

申请日：2021-12-07

申请人： International Business Machines Corporation

发明人： VAN DER STRATEN, Oscar ,  MOTOYAMA, Koichi ,  CHENG, Kenneth, Chun Kuen ,  MANISCALCO, Joseph ,  YANG, Chih-Chao

IPC分类号： H01L43/08 ,  G11C11/16 ,  H01L43/12

公开(公告)号：EP1992012A1

公开(公告)日：2008-11-19

申请号：EP07861255.3

申请日：2007-03-01

申请人： International Business Machines Corporation

发明人： YANG, Chih-chao ,  SPOONER, Terry, A. ,  VAN DER STRATEN, Oscar

IPC分类号： H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/32131 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings. In accordance with the present invention, such an interconnect structure is achieved by providing the gouging feature in the bottom of the via opening prior to formation of the line opening and deposition of the diffusion barrier in said line opening.