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    IMAGING DEVICE
    4.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号：EP4280592A1

    公开(公告)日：2023-11-22

    申请号：EP21919742.3

    申请日：2021-12-27

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： HIRASE, Junji ,  YAMADA, Takayoshi ,  NISHIMURA, Kazuko

    IPC分类号： H04N5/355 ,  H01L27/146 ,  H04N5/3745

    摘要： An imaging apparatus includes: a photoelectric converter that generates charge through photoelectric conversion; a charge accumulator in which the charge is accumulated; and a metal-oxide-semiconductor capacitor including a first terminal, a second terminal, a gate, an oxide layer, and at least one semiconductor region. During exposure, the first terminal is electrically connected to the charge accumulator, the gate is electrically connected to the first terminal, the at least one semiconductor region is electrically connected to the second terminal, and the oxide layer is located between the gate and the at least one semiconductor region.

    SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND METHOD FOR CONTROLLING SOLID-STATE IMAGING UNIT
    6.
    发明公开
    SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND METHOD FOR CONTROLLING SOLID-STATE IMAGING UNIT 审中-公开

    公开(公告)号：EP4261890A1

    公开(公告)日：2023-10-18

    申请号：EP21903196.0

    申请日：2021-11-25

    申请人： Sony Semiconductor Solutions Corporation

    发明人： BANDO, Masashi

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/3745

    摘要： A solid-state imaging element according to an aspect of the present disclosure includes: a first photoelectric conversion unit (31) having a light incident surface on which light is incident; a first gate electrode (36) provided in the first photoelectric conversion unit (31) via an insulating film (35); a second photoelectric conversion unit (32) provided on a side of the light incident surface with respect to the first photoelectric conversion unit (31); and a voltage application unit that applies a voltage corresponding to the number of charges accumulated by the second photoelectric conversion unit (32) to the first gate electrode (36).