System for changing energy of ribbon ion beam and ion implantation system
    1.
    发明专利
    System for changing energy of ribbon ion beam and ion implantation system 有权
    改变RIBBON离子束和离子植入系统的能量的系统

    公开(公告)号:JP2014183042A

    公开(公告)日:2014-09-29

    申请号:JP2013241688

    申请日:2013-11-22

    Abstract: PROBLEM TO BE SOLVED: To provide a system for generating a ribbon ion beam having desired energy and high-grade profile uniformity.SOLUTION: An ion implantation system 10 comprises: an ion source 12 generating a ribbon ion beam 8; and at least one correction device 42 for adjusting a current density along a longitudinal dimension of the ion beam 8 in such a manner that a current density profile exhibits desired uniformity. The ion implantation system 10 may also include other elements such as an analysis magnet 20, an electrostatic deflector 52 and a convergent lens 48 for shaping the ion beam 8, guiding the ion beam to an end station 24 and making the ion beam incident to a substrate 26. In some embodiments, a nominally one-dimensional ribbon beam 8 having a longitudinal dimension larger than a diameter of the substrate is generated, such that ions can be implanted into the substrate while having high-grade longitudinal profile uniformity.

    Abstract translation: 要解决的问题:提供一种用于产生具有期望能量和高等级轮廓均匀性的带状离子束的系统。解决方案:离子注入系统10包括:产生带状离子束8的离子源12; 以及至少一个用于沿着离子束8的纵向尺寸调节电流密度的校正装置42,使得电流密度分布呈现期望的均匀性。 离子注入系统10还可以包括诸如分析磁体20,静电偏转器52和用于使离子束8成形的会聚透镜48的其它元件,将离子束引导到终端台24并使离子束入射到 衬底26.在一些实施例中,产生具有大于衬底直径的纵向尺寸的名义上的一维带状束8,使得可以将离子注入到衬底中同时具有高等级的纵向轮廓均匀性。

    Ion source, operation method thereof and electron gun
    2.
    发明专利
    Ion source, operation method thereof and electron gun 有权
    离子源,其操作方法和电子枪

    公开(公告)号:JP2014183040A

    公开(公告)日:2014-09-29

    申请号:JP2013228061

    申请日:2013-11-01

    CPC classification number: H01J27/205

    Abstract: PROBLEM TO BE SOLVED: To provide an improved ion source capable of creating a relatively uniform ion beam profile.SOLUTION: An ion source includes at least one electron gun 104. The electron gun 104 includes an electron source 302 generating a beam 308 of electrons and an inlet 312 receiving gas. The electron gun 104 also includes a plasma region defined by at least an anode 304 and a grounding element 306, and the plasma region is capable of generating plasma 310 from the gas received via the inlet 312. The plasma 310 is maintained by at least a portion of the beam 308 of electrons. The electron gun 104 further includes an outlet 312 for taking out at least either (i) ions created by the plasma 310 or (ii) at least a portion of the beam 308 of electrons created by the electron source 302.

    Abstract translation: 要解决的问题:提供能够产生相对均匀的离子束轮廓的改进的离子源。解决方案:离子源包括至少一个电子枪104.电子枪104包括产生电子束308的电子源302和 接收气体的入口312。 电子枪104还包括由至少阳极304和接地元件306限定的等离子体区域,并且等离子体区域能够从经由入口312接收的气体产生等离子体310.等离子体310通过至少一个 电子束308的一部分。 电子枪104还包括用于取出由等离子体310产生的(i)离子或(ii)由电子源302产生的电子束的至少一部分的至少一部分的出口312。

    Ion source and magnetic field generation method
    3.
    发明专利
    Ion source and magnetic field generation method 有权
    离子源和磁场产生方法

    公开(公告)号:JP2014183041A

    公开(公告)日:2014-09-29

    申请号:JP2013231709

    申请日:2013-11-08

    CPC classification number: H01J27/022 H01J27/205

    Abstract: PROBLEM TO BE SOLVED: To provide an improved ion source capable of creating a relatively uniform ion beam profile.SOLUTION: A ion source comprises an ionization chamber 102 and two magnetic field sources 502. The ionization chamber 102 has a longitudinal axis extending through the chamber and includes two opposing chamber walls 504, and the chamber walls 504 are parallel to the longitudinal axis. Each of the two magnetic field sources 502 includes (i) a core and (ii) a coil substantially wound around the core. The magnetic field sources 502 are disposed along an outer surface of each of the opposing chamber walls 504 and proximately to each other, and directed substantially in parallel with the longitudinal axis. The cores of the magnetic field sources 502 are physically separated and electrically insulated from each other.

    Abstract translation: 要解决的问题:提供能够产生相对均匀的离子束轮廓的改进的离子源。解决方案:离子源包括电离室102和两个磁场源502.电离室102具有延伸穿过腔室的纵向轴线 并且包括两个相对的室壁504,并且室壁504平行于纵向轴线。 两个磁场源502中的每一个包括(i)芯和(ii)基本上缠绕在芯上的线圈。 磁场源502沿着每个相对的室壁504的外表面并且彼此靠近地布置,并且基本上与纵向轴线平行地指向。 磁场源502的磁芯在物理上分离并且彼此电绝缘。

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