公开(公告)号：JP2014183042A

公开(公告)日：2014-09-29

申请号：JP2013241688

申请日：2013-11-22

Applicant: Nissin Ion Equipment Co Ltd ,  日新イオン機器株式会社

Inventor： SAMI K HAHTO ,  HAMAMOTO NARIAKI ,  IAI TETSUYA

IPC: H01J37/317 ,  H01J37/04 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/047 ,  H01J2237/10 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: PROBLEM TO BE SOLVED: To provide a system for generating a ribbon ion beam having desired energy and high-grade profile uniformity.SOLUTION: An ion implantation system 10 comprises: an ion source 12 generating a ribbon ion beam 8; and at least one correction device 42 for adjusting a current density along a longitudinal dimension of the ion beam 8 in such a manner that a current density profile exhibits desired uniformity. The ion implantation system 10 may also include other elements such as an analysis magnet 20, an electrostatic deflector 52 and a convergent lens 48 for shaping the ion beam 8, guiding the ion beam to an end station 24 and making the ion beam incident to a substrate 26. In some embodiments, a nominally one-dimensional ribbon beam 8 having a longitudinal dimension larger than a diameter of the substrate is generated, such that ions can be implanted into the substrate while having high-grade longitudinal profile uniformity.

Abstract translation: 要解决的问题：提供一种用于产生具有期望能量和高等级轮廓均匀性的带状离子束的系统。解决方案：离子注入系统10包括：产生带状离子束8的离子源12; 以及至少一个用于沿着离子束8的纵向尺寸调节电流密度的校正装置42，使得电流密度分布呈现期望的均匀性。 离子注入系统10还可以包括诸如分析磁体20，静电偏转器52和用于使离子束8成形的会聚透镜48的其它元件，将离子束引导到终端台24并使离子束入射到 衬底26.在一些实施例中，产生具有大于衬底直径的纵向尺寸的名义上的一维带状束8，使得可以将离子注入到衬底中同时具有高等级的纵向轮廓均匀性。

公开(公告)号：JP2012185953A

公开(公告)日：2012-09-27

申请号：JP2011047097

申请日：2011-03-04

Applicant: Nissin Ion Equipment Co Ltd ,  日新イオン機器株式会社

Inventor： UNE HIDEYASU ,  TANAKA KOHEI ,  HAMAMOTO NARIAKI ,  FUJITA HIDEKI

IPC: H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide an in-line type ion irradiation device, irradiating the upper half and the lower half of a substrate with ions using two ion beam supply devices, which is structured so that a desired dosage can be injected over the whole surface of the substrate even when one ion beam supply device stops or abnormally completes its operation in the course of processing.SOLUTION: The present invention controls a substrate rotation mechanism 70 after one round trip of ion beam irradiation processing, inputs a substrate 2 into an ion beam irradiation device 100 again after rotating the substrate by 180 degrees, and irradiates a range where ion beam irradiation processing has not yet been completed with ion beams to irradiate the whole surface of the substrate with ion beams.

Abstract translation: 要解决的问题：为了提供在线型离子照射装置，使用两个离子束供给装置用离子照射衬底的上半部和下半部，其结构使得可以注入所需剂量 即使一个离子束供给装置在处理过程中停止或异常地完成其操作，也在基板的整个表面上。 解决方案：本发明在离子束照射处理的一次往返之后控制衬底旋转机构70，在将衬底旋转180度之后再次将衬底2输入到离子束照射装置100中，并且照射离子束离子 离子束用离子束照射基片的整个表面尚未完成光束照射处理。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2014183041A

公开(公告)日：2014-09-29

申请号：JP2013231709

申请日：2013-11-08

Applicant: Nissin Ion Equipment Co Ltd ,  日新イオン機器株式会社

Inventor： SAMI K HAHTO ,  HAMAMOTO NARIAKI

IPC: H01J27/14 ,  H01J37/08

CPC classification number: H01J27/022 ,  H01J27/205

Abstract: PROBLEM TO BE SOLVED: To provide an improved ion source capable of creating a relatively uniform ion beam profile.SOLUTION: A ion source comprises an ionization chamber 102 and two magnetic field sources 502. The ionization chamber 102 has a longitudinal axis extending through the chamber and includes two opposing chamber walls 504, and the chamber walls 504 are parallel to the longitudinal axis. Each of the two magnetic field sources 502 includes (i) a core and (ii) a coil substantially wound around the core. The magnetic field sources 502 are disposed along an outer surface of each of the opposing chamber walls 504 and proximately to each other, and directed substantially in parallel with the longitudinal axis. The cores of the magnetic field sources 502 are physically separated and electrically insulated from each other.

Abstract translation: 要解决的问题：提供能够产生相对均匀的离子束轮廓的改进的离子源。解决方案：离子源包括电离室102和两个磁场源502.电离室102具有延伸穿过腔室的纵向轴线 并且包括两个相对的室壁504，并且室壁504平行于纵向轴线。 两个磁场源502中的每一个包括（i）芯和（ii）基本上缠绕在芯上的线圈。 磁场源502沿着每个相对的室壁504的外表面并且彼此靠近地布置，并且基本上与纵向轴线平行地指向。 磁场源502的磁芯在物理上分离并且彼此电绝缘。