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    Diamond electron source and its manufacturing method
    1.
    发明专利
    Diamond electron source and its manufacturing method 有权
    金刚石电子源及其制造方法

    公开(公告)号：JP2008210775A

    公开(公告)日：2008-09-11

    申请号：JP2007236851

    申请日：2007-09-12

    Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

    Inventor： UEDA AKIHIKO ,  YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

    IPC: H01J9/02 ,  H01J1/304 ,  H01J37/073

    CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

    Abstract: PROBLEM TO BE SOLVED: To provide a diamond electron source and its manufacturing method wherein one sharp-pointed section as an electron emission point for use in an electron beam device such as an electron microscope is formed at one end of a columnar diamond single crystal having a size where resist coating is difficult in a microfabrication process. SOLUTION: One end of the columnar diamond single crystal 10 is polished to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. After a thin film layer 14 having a predetermined shape is deposited on the ceramic layer 12 by using a focused ion beam system, the ceramic layer 12 is patterned by etching using the thin film layer 14 as a mask. One sharp-pointed section is formed at the one end of the columnar diamond single crystal 10 by dry etching using the formed ceramic mask. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种金刚石电子源及其制造方法，其中在柱状金刚石的一端形成作为用于诸如电子显微镜的电子束装置中的电子发射点的尖锐部分 具有在微细加工过程中难以进行抗蚀剂涂层的尺寸的单晶。

    解决方案：抛光柱状金刚石单晶10的一端以形成光滑的平坦表面11，并且在光滑的平坦表面11上形成陶瓷层12.在沉积具有预定形状的薄膜层14之后 通过使用聚焦离子束系统在陶瓷层12上，通过使用薄膜层14作为掩模的蚀刻来对陶瓷层12进行图案化。 通过使用形成的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成一个尖锐部分。 版权所有（C）2008，JPO＆INPIT

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