Electron emitter, field emission device provided with electron emitter
    12.
    发明专利
    Electron emitter, field emission device provided with electron emitter 有权
    电子发射器,电子发射器提供的场发射装置

    公开(公告)号:JP2010056062A

    公开(公告)日:2010-03-11

    申请号:JP2009003713

    申请日:2009-01-09

    Abstract: PROBLEM TO BE SOLVED: To provide an emitter of a field emission electron having a carbon film structure, which suppresses local electric field concentration, prevents current deterioration and a discharge phenomenon which accompanies thermal deterioration, suppresses the dispersion of electron emission, provides a desired function in a field emission device which applies the emitter, and to provide a field emission device that applies the emitter which fulfills a desired function and provides a more practical product. SOLUTION: The electron emitter is provided with a guard electrode 13 on an outer circumference side of the carbon film structure 10, formed on a substrate 7 by a plasma CVD method. The guard electrode 13 includes a convex-curved surface part (a curved-surface part which is curved to the opposite side, in the film-forming direction) 13a in a film-forming direction of the carbon film structure 10. The guard electrode having the curved surface part 13a, of which the curvature radius R1 on the outer circumference side of the guard electrode 13 is larger than a curvature radius R2 on a carbon film structure side, is applied. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题为了提供抑制局部电场浓度的具有碳膜结构的场致发射电子的发射极,防止电流恶化和伴随热劣化的放电现象,抑制电子发射的分散,提供 在施加发射极的场致发射器件中的期望功能,以及提供施加发射器的场致发射器件,其实现期望的功能并提供更实用的产品。 解决方案:电子发射器在碳膜结构10的外周侧设置有通过等离子体CVD法形成在基板7上的保护电极13。 保护电极13包括在碳膜结构体10的成膜方向上的凸曲面部(与成膜方向相反侧弯曲的曲面部)13a。保护电极具有 施加保护电极13的外周侧的曲率半径R1大于碳膜结构侧的曲率半径R2的曲面部13a。 版权所有(C)2010,JPO&INPIT

    Electron-emitting source, electron-emitting element, and method of manufacturing electron-emitting source
    13.
    发明专利
    Electron-emitting source, electron-emitting element, and method of manufacturing electron-emitting source 审中-公开
    电子发射源,电子发射元件和制造电子发射源的方法

    公开(公告)号:JP2009032697A

    公开(公告)日:2009-02-12

    申请号:JP2008196587

    申请日:2008-07-30

    CPC classification number: H01J1/304 H01J3/021 H01J2201/30426 H01J2201/30453

    Abstract: PROBLEM TO BE SOLVED: To provide: an electron-emitting source; an electron-emitting element; and a method of manufacturing an electron-emitting source. SOLUTION: This electron-emitting source has a carbon-based substance, and a deterioration-preventing substance for the carbon-based substance, wherein binding energy between the deterioration-preventing substance for the carbon-based substance and external oxygen is larger than that between the carbon-based substance and the external oxygen. This electron-emitting element is provided with the electron-emitting source. This manufacturing method is provided for manufacturing the electron-emitting source. Accordingly, the electron-emitting source can have excellent field-emission efficiency, and long life. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供:电子发射源; 电子发射元件; 以及制造电子发射源的方法。 解决方案:该电子发射源具有碳系物质和碳系物质的劣化防止物质,其中碳系物质的劣化防止物质与外部氧之间的结合能较大 比碳基物质和外部氧气之间的温度高。 该电子发射元件设置有电子发射源。 该制造方法用于制造电子发射源。 因此,电子发射源可以具有优异的场致发射效率和长的使用寿命。 版权所有(C)2009,JPO&INPIT

    Carbon film for field emission device
    14.
    发明专利
    Carbon film for field emission device 有权
    用于场发射装置的碳膜

    公开(公告)号:JP2006313761A

    公开(公告)日:2006-11-16

    申请号:JP2006229336

    申请日:2006-08-25

    Inventor: TOLT ZHIDAN LI

    Abstract: PROBLEM TO BE SOLVED: To provide a carbon film for a field emission device utilized for manufacture of a flat cathode, provided with specific physical characteristics. SOLUTION: The carbon film (703) used as a field emission cathode is a thin carbon film formed on a substrate (803). The carbon film has a UV-Raman band ranging between 1578 cm -1 and 1620 cm -1 with a full width at half maximum (FWHM) of 25 to 165 cm -1 . The carbon film may be thinner than 300 nanometers. The substrate on which the film is deposited may or may not have conductivity. In case that the substrate does not have conductivity, the substrate can be coated by a continuous conductive layer, or by a minute net structure of a conductive material. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供用于制造具有特定物理特性的扁平阴极的用于场致发射装置的碳膜。 解决方案:用作场致发射阴极的碳膜(703)是形成在基板(803)上的薄碳膜。 该碳膜具有范围在1578cm -1至16cm之间的紫外线 - 拉曼带,其宽度最大(FWHM)为25至165cm 3, SP> -1 。 碳膜可以比300纳米薄。 其上沉积有膜的基底可以具有或不具有导电性。 在基板不具有导电性的情况下,可以通过连续导电层或导电材料的微小网状结构来涂覆基板。 版权所有(C)2007,JPO&INPIT

    Electron emitting element, electron source, image display device, and manufacturing method of electron emitting element
    17.
    发明专利
    Electron emitting element, electron source, image display device, and manufacturing method of electron emitting element 审中-公开
    电子发射元件,电子源,图像显示装置和电子发射元件的制造方法

    公开(公告)号:JP2009104916A

    公开(公告)日:2009-05-14

    申请号:JP2007276269

    申请日:2007-10-24

    CPC classification number: H01J9/025 H01J31/127 H01J2201/30453 H01J2329/0444

    Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element of field emission type which realizes electron emission that carries out beam convergence by low electric field and can emit electrons with high efficiency at a low voltage and of which manufacturing process is easy, an electron source, and an image display device. SOLUTION: A manufacturing method of the electron emitting element comprises a process to prepare beforehand a substrate having an insulating or a semi-conductive layer, and a process to expose the layer in an atmosphere including a neutral radical containing hydrogen. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 解决的问题:为了提供一种通过低电场实现光束会聚的电子发射的场致发射型电子发射元件,能够在低电压下以高效率发射电子,并且制造工艺容易, 电子源和图像显示装置。 解决方案:电子发射元件的制造方法包括预先制备具有绝缘或半导体层的衬底的工艺,以及在包含含氢的中性基团的气氛中暴露该层的工艺。 版权所有(C)2009,JPO&INPIT

    Field emission type electrode, its manufacturing method, and its manufacturing device
    18.
    发明专利
    Field emission type electrode, its manufacturing method, and its manufacturing device 有权
    现场排放型电极及其制造方法及其制造装置

    公开(公告)号:JP2009087775A

    公开(公告)日:2009-04-23

    申请号:JP2007256825

    申请日:2007-09-28

    CPC classification number: H01J1/304 H01J9/025 H01J2201/30453 H01J2201/30457

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electrode capable of comparatively uniforming electron emission density. SOLUTION: After applying a humidifying treatment on a field emission type electrode with an electron emission film formed, a pulse voltage is impressed between the field emission type electrode and an opposed electrode. Water molecules adhered on the electron emission film repeats absorption and desorption in correspondence to the pulse voltage. With this, electron begins to be emitted from an area with weak electron emission intensity and an area in which electron is not emitted, so that unevenness of electron emission density of the field emission type electrode can be comparatively averaged out. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够使电子发射密度相对均匀的场致发射型电极的制造方法。 解决方案:在形成有电子发射膜的场发射型电极上进行加湿处理之后,在场发射型电极和相对电极之间施加脉冲电压。 附着在电子发射膜上的水分子对应于脉冲电压重复吸收和解吸。 由此,电子开始从具有弱电子发射强度的区域和不发射电子的区域发射,从而可以相对地平均出场发射型电极的电子发射密度的不均匀性。 版权所有(C)2009,JPO&INPIT

    Carbon film for field emission device
    20.
    发明专利
    Carbon film for field emission device 有权
    用于场发射装置的碳膜

    公开(公告)号:JP2007220690A

    公开(公告)日:2007-08-30

    申请号:JP2007148694

    申请日:2007-06-04

    Inventor: TOLT ZHIDAN LI

    Abstract: PROBLEM TO BE SOLVED: To provide a field emission film used for manufacturing a flat cathode, and exhibiting a specific physical characteristic. SOLUTION: A carbon film 703 used for a field emission cathode comprises a layer of thin carbon film on a substrate 803. The carbon film has a UV Raman band in the range of 1,578 to 1,620 cm -1 with a full width at half maximum (FWHM) from 25 to 165 cm -1 . The thickness of the carbon film may be smaller than 300 nm. A substrate for depositing the film may be conductive or nonconductive. In the case of the nonconductive substrate, the substrate can be coated with a continuous conductive layer or a dense mesh structure of a conductive material. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供用于制造扁平阴极并具有特定物理特性的场致发射膜。 解决方案:用于场发射阴极的碳膜703包括在衬底803上的薄碳膜层。碳膜具有1578至1,620cm -1的范围内的UV拉曼带, SP>具有25至165cm -1的半高宽(FWHM)。 碳膜的厚度可以小于300nm。 用于沉积膜的衬底可以是导电的或不导电的。 在非导电衬底的情况下,衬底可以涂覆有导电材料的连续导电层或致密网状结构。 版权所有(C)2007,JPO&INPIT

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